The trapping behavior of deuterium and helium in polycrystalline tungsten (PCW) under D+-only, He+-only, sequential and simultaneous irradiation was studied as a function of incident ion fluences and irradiation temperature. Deuterium implanted at 300 and 500 K gets trapped at surface adsorption sites, vacancy-related traps, or extended defects. No deuterium was trapped for 700 K implantations. Results were affected by tungsten-carbide impurities in PCW specimens. It is suggested that He trapping occurs via the formation of He clusters, at impurity sites, or as part of He-vacancy complexes. For sequential implantations, D and He were found to de-trap each other, with He impeding the trapping of D when implanted first at 300 K. Under simultaneous irradiation a decrease in D inventories was observed for all cases, and a re-distribution of He to higher energy traps (associated with He-vacancy complex formation) was observed for higher fluences and temperatures.

The trapping behavior of deuterium and helium in polycrystalline tungsten (PCW) under D+-only, He+-only, sequential and simultaneous irradiation was studied as a function of incident ion fluences and irradiation temperature. Deuterium implanted at 300 and 500 K gets trapped at surface adsorption sites, vacancy-related traps, or extended defects. No deuterium was trapped for 700 K implantations. Results were affected by tungsten-carbide impurities in PCW specimens. It is suggested that He trapping occurs via the formation of He clusters, at impurity sites, or as part of He-vacancy complexes. For sequential implantations, D and He were found to de-trap each other, with He impeding the trapping of D when implanted first at 300 K. Under simultaneous irradiation a decrease in D inventories was observed for all cases, and a re-distribution of He to higher energy traps (associated with He-vacancy complex formation) was observed for higher fluences and temperatures.