Within the exciting current trend to explore novel low-dimensional systems, the possibility to inject pure spin currents in graphene and other two-dimensional crystals has attracted considerable attention in the past few years. The theoretical prediction of large spin relaxation times and experimentally observed mesoscopic-scale spin diffusion lengths places graphene as a promising base system for future spintronics devices. This is due to the unique characteristics intrinsic to the two-dimensional lattice of carbon atoms forming graphene, such as the lack of nuclear spins and weak spin-orbit coupling of the charge carriers. Interestingly for some spintronic applications, the latter can be chemically and physically engineered, with large induced spin-orbit couplings found in functionalized graphene sheets. Understanding spin injection, spin current and spin dynamics in graphene is of a great interest, both from the fundamental and applied points of view. This thesis presents an experimental study of dynamical generation of spin currents in macroscopic graphene sheets by means of spin pumping from the precessing magnetization of an adjacent ferromagnet. The spin pumping characteristics are studied by means of ferromagnetic resonance (FMR) measurements in Permalloy/graphene (Py/Gr) bilayers. Changes in the FMR linewidth induced by the presence of graphene (when compared to studies with only Py films) correspond to an increase in the Gilbert damping in the ferromagnetic layer (proportional to the FMR linewidth) and interpreted as a consequence of spin pumping at the Py/Gr interface driven by the Py magnetization dynamics (i.e., magnetic induced by the microwave stimulus). FMR experiments are performed on different FM/Gr interfaces, completing a set of studies designed to systematically identify and eliminate damping enhancement arising from processes other than spin pumping. Remarkably, a substantial enhancement of the Gilbert damping observed in Py/Gr strips with graphene protruding a few micrometers from the strip sides is univocally associated to spin pumping at the quasi-onedimensional interface between the Py strip edges and graphene. This increase in the FMR linewidth compares with observations in other bilayer systems, in where thick (thicker than the spin diffusion length) layers of heavy metals with strong spin-orbit coupling are employed as the non-magnetic layer, indicating that spin relaxation in chemically grown graphene must be greatly enhanced in order to account for the losses of angular momentum lost by the ferromagnet. The fundamental implications of the results presented in this thesis point to a non-trivial nature of the spin pumping mechanism owing to the two-dimensionality of the non-magnetic layer (i.e., graphene). In addition, a spintronics device designed to interconvert charge and spin currents has been designed. A high-frequency microwave irradiation lock-in modulation technique is employed to detect the small electrical voltages generated by the inverse spin Hall effect (ISHE). As a proof of principle, a successful spin-charge interconversion in Py/Pt-based devices is experimentally demonstrated in this thesis. The challenges associated with the spin-charge interconversion in twodimensional devices are discussed and systematically addressed, and a potential device geometry for measuring the ISHE in Py/Gr-based systems is provided.

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La spintronique antiferromagnétique est un domaine de recherche émergent dans le secteur des technologies de l'information. Ce domaine exploite la combinaison unique de propriétés dans les matériaux antiferromagnétiques. Leur grande fréquence d'excitation, leur robustesse face à des champs extérieurs, une aimantation totale nulle et la possibilité de générer de forts effets de magnéto-transport les rendent particulièrement intéressants. Le transfert de spin, le couplage spin-orbite et les effets caloritroniques constituent les phénomènes qui ont façonné une grande partie de la recherche et des développements récents en spintronique. Dans cette thèse, nous avons étudié les effets de transfert et de pompage de spin dans des antiferromagnétiques métalliques et isolants au moyen de la technique de résonance ferromagnétique, dans des tricouches du type injecteur de spin ferromagnétique - NiFe, CoFeB / (conducteur de spin - Cu / absorbeur de spin antiferromagnétique - IrMn, NiFeOx, NiO. Les mesures de la dépendance en température de la relaxation ferromagnétique ont révélé un nouvel effet de pompage de spin associé aux fluctuations linéaires lors de la transition de phase magnétique de l'antiferromagnétique, quel que soit l'état électronique et la nature du transport de spin. Cela ouvre de nouvelles voies pour un pompage de spin plus efficace, tout en fournissant une méthode polyvalente pour mesurer la température critique des films ultra-minces à aimantation totale nulle. Dans le but de mesurer à la fois les fluctuations de spin linéaires et non linéaires dans l'antiferromagnétique, nous avons effectué des mesures électriques dans une configuration de mesure du type ‘spin Hall’. Une dépendance en température non-monotone inédite de la tension dc transverse a parfois été observée. Elle est principalement associée aux propriétés d’un ferromagnétique spécifique: le Permalloy, sans rapport avec les effets de rectification de spin. Ces résultats s'ajoutent à une littérature croissante sur l'absorption d’un courant de spin, soulignant la capacité des ferromagnétiques à agir comme détecteurs de courant de spin émis à la suite de phénomènes impliquant une dynamique d’aimantation. Finalement, nous avons utilisé le couplage d'échange pour étudier et ensuite façonner les propriétés magnétiques et électriques de plusieurs antiferromagnétiques destinés à diverses applications spintroniques, y compris la lecture par magnétorésistance tunnel anisotrope. / Antiferromagnetic spintronics is an emerging research field in the area of information technology that exploits the unique combination of properties of antiferromagnets. It is their high excitation frequency, robustness against external fields, zero net magnetization and possibility of generating large magneto-transport effects that makes them so interesting. Spin transfer, spin-orbit coupling and spin caloritronics constitute the phenomena that have shaped much of the recent research and development towards pure antiferromagnetic spintronics. Here we investigate spin transfer torque and spin pumping in both metallic and insulating antiferromagnets by means of ferromagnetic resonance technique, in ferromagnetic spin injector – NiFe, CoFeB / (spin conductor – Cu) / antiferromagnetic spin sink – IrMn, NiFeOx, NiO trilayers. Temperature dependence measurements of the ferromagnetic relaxation revealed a novel spin pumping effect associated to the linear fluctuations at the magnetic phase transition of the antiferromagnet, regardless its electronic state and the nature of the spin transport. This opens new ways towards more efficient spin pumping, while providing at the same time a versatile method to probe the critical temperature of ultrathin films with zero net magnetization. Next, in an effort to probe linear as well as non-linear fluctuations in the antiferromagnet we conducted electrical measurements in spin Hall geometry. A novel non-monotonous temperature dependence of transverse dc voltage was sometimes observed, mostly associated to the properties of a specific ferromagnet: Permalloy, unrelated to spin rectification effects. These findings add to a growing body of literature on spin current absorption, highlighting the ability of ferromagnets to act as spin current detectors, in phenomena involving magnetization dynamics. Finally, we used exchange bias to investigate and subsequently engineer the magnetic and electric properties of various antiferromagnets intended for diverse spintronic applications including reading via tunneling anisotropic magnetoresistance.

我們主要研究拓樸絕緣體與鐵磁物質之間的自旋幫浦效應（spin pumping effect），我們選用的鐵磁材料是具有鐵磁性的鎳鐵合金（Py），厚度固定為40nm，而拓樸絕緣體則是選用碲化鉍（Bi2Te3），厚度範圍是0～100nm，碲化鉍已被確定為一個三維拓撲絕緣體，拓撲絕緣體其表面電子態呈線性色散關係，本身中心是絕緣體，但其表面容許有導電態。此導電態一個最有用的特性是其電子的動量與自旋維持一定方向關係（spin-momentum locking），這使得以自旋來傳遞訊息成為可能。但是實驗上要達到中心是絕緣體相當困難。 過去的實驗已驗證鐵磁共振（Ferromagnetic resonance，FMR）現象在鐵磁/一般金屬雙層膜以及鐵磁/半導體雙層膜，可以使其鐵磁層產生一純自旋流流向非磁性層，這被稱為自旋幫浦效應（spin pumping effect）。當此自旋流跨越膜面介面時，不同自旋的電子由於自旋軌道耦合作用（Spin–orbit interaction），將發生逆自旋霍爾效應（ISHE）並產生一橫向電荷流。在我們的研究中，鐵磁共振（FMR）現象透過網路分析儀在設定的外加磁場下掃描頻率。測得的共振頻率與磁場作圖並以Kittel equation擬合（fitting）出有效場（effective field）。我們發現於絕對溫度5K，隨著碲化鉍（Bi2Te3）膜厚從0nm到15nm增加時，其有效場也增加，但當薄膜厚度大於15nm時，有效磁場將下降。我們分析碲化鉍（Bi2Te3）的表面態（surface state）與塊材（bulk）對有效場變化之貢獻。