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  • About
  • The Global ETD Search service is a free service for researchers to find electronic theses and dissertations. This service is provided by the Networked Digital Library of Theses and Dissertations.
    Our metadata is collected from universities around the world. If you manage a university/consortium/country archive and want to be added, details can be found on the NDLTD website.
1121

Morphology and microstructure control of conjugated polymer thin films for high performance field-effect transistors

Lei, Yanlian 19 August 2016 (has links)
Charge transport in semiconductor channels of organic field-effect transistors (FETs) depends largely on the molecular ordering of organic semiconductor molecules. This is particularly demanding for polymer-based FETs, where channel semiconductors are non-molecular in nature, and generally form semiconductor films of low crystallinity. As a result, great theoretical and practical interests have been directed towards facile solution processes that can transform a low molecular weight (MW) and low mobility conjugated polymer into a high crystalline order and high-mobility semiconductor. This research focuses on developing effective strategies for achieving high mobility as well as other desirable FET properties through properly controlling the morphology and molecular ordering of conjugated polymer channel layers. The relationships between morphologic/microstructural properties of the polymer semiconductor films and charge transport characteristics in the films are systematically investigated and elucidated. The purpose of this work is to achieve high performance solution-processed polymer FETs with high mobility, excellent ambient stability, and performance uniformity that display practical significance for application in next-generation electronics. In the first part of this thesis, functionalization of the gate dielectric surface by grafting highly ordered and dense coverage of hybrid silane self-assembled monolayers (SAMs) is discussed. A two-step solution-processed method using a combination of trichlorooctadecylsilane (OTS-18) and trichlorooctylsilane (OTS-8) has been developed to create high-performance hybrid dual-silane SAM on the surface of silicon dioxide (SiO2), thus enabling the achievement of both high field-effect mobility and current on/off ratio, together with other desirable FET properties. The hybrid SAM approach is also adopted for attaining high performing polymer FETs using a different SAM agent combination of phenyltrichlorosilane (PTS) and OTS-18. With the progress in functionalizing the surface of gate dielectric insulator by two-step grafting SAMs, the advancement in enhancing the crystalline structural order of the polymer channel layer is highlighted. This was realized by the incorporation of polar insulator of polyacrylonitrile (PAN) into the polymer semiconductor solution at appropriate loadings, enabling the formation of excellent semiconductor films with high crystalline order. PAN serves as an efficient mediating medium for the crystallization of polymer semiconductor, leading to the creation of large crystalline domains within the PAN matrix. A 1̃0-nm thick semiconductor layer with richer semiconductor crystalline domains is constructed near the vicinity of the gate dielectric surface, facilitating efficient charge conduction in the channel semiconductor. Enhancements in field-effect mobility by as much as about one order in magnitude and current on/off ratio of two to three orders in magnitude have been realized in polymer FETs. PAN incorporation also dramatically enhances the stability and processability of semiconductor solutions, enabling rapid fabrication of channel semiconductors in polymer FETs via common graphic art printing techniques such as inkjet printing for practical adoption. Another unique facile solution process which transforms a lower-MW and low-mobility conjugated polymer, e.g., diketopyrrolopyrrole-dithienylthieno[3,2-b] thiophene (DPP-DTT), into a high crystalline order and high-mobility nanowire network for high performance polymer FETs has been also developed in this work. This approach involves solution fabrication of a channel semiconductor film using a lower MW DPP-DTT/polystyrene blend system. With the help of cooperative shifting motions of polystyrene chain segments, an interpenetrating nanowire semiconductor network is readily self-assembled and crystallized out in the polystyrene matrix, and thereby providing significantly enhanced mobility (over 8 cm2 V-1 s-1) and current on/off ratio (107). Finally, the concept of generating polymer nanowire network in the effective photoactive channel is extended for the development of highly sensitive near-infrared (NIR) organic phototransistors (OPTs). The NIR-OPTs based on DPP-DTT nanowire network exhibit high responsivity of 2̃46 A W-1 under an NIR illumination source with the wavelength of 850 nm at a low intensity of ̃0.1 mW cm-2. This value is over one order in magnitude higher than that of the structurally identical planar DPP-DTT thin film based OPTs. The high performance of the nanowire network-based phototransistors is attributed to the excellent hole transport ability, reduced density of the structural defects in the polymer nanowire network, and improved contact at the channel layer/electrode interfaces. The high sensitivity and low cost solution-fabrication process render this OPT technology appealing and practically viable for application in large area NIR sensors.
1122

Fabricação e caracterização de filmes finos e ultrafinos de coroas de éter com azobenzeno incorporado e estudo da birrefringência fotoinduzida /

Shimizu, Flávio Makoto. January 2008 (has links)
Orientador: José Alberto Giacometti / Banca: Marystela Ferreira / Banca: Elisabeth Andreoli de Oliveira / - O Programa de Pós-Graduação em Ciência e Tecnologia de Materiais, PosMat, tem caráter institucional e integra as atividades de pesquisa em materiais de diversos campi da Unesp / Resumo: Foram estudadas as monocamadas de Langmuir, filmes Langmuir-Blodgett (LB) e filmes finos preparados pela técnica de casting (filmes auto-sustentados) usando vários tipos de moléculas de azocoroa de éter. Os filmes foram caracterizados por espectroscopia de UV-Vis, FTIR e espalhamento Raman. O composto 29-diazocoroa de éter com dois substituinte n-octil foi a única molécula de azocoroa de éter que permitiu a preparação de filmes LB de alta qualidade e com propriedades ópticas adequadas para uso no estudo de birrefringência fotoinduzida. Nas medidas de birrefringência foram empregados os filmes preparados do composto 29-diazocoroa de éter pela técnicas LB e casting, variando-se os seguintes parâmentros experimentais: número de monocamadas do filme LB, espessura de filme auto-sustentado, intensidade da luz de excitação e temperatura. A dinâmica de formação e decaimento de birrefringência mostrou ser muito mais rápida para os filmes LB do que para os filmes auto-sustentados. As curvas experimentais da dinâmica da birrefringência fotoinduzida para os filmes LB foram ajustadas usando as equações de Debye e de Kohlrausch-Williams-Watts (KWW), enquanto que as curvas experimentais dos filmes auto-sustentados foram ajustados usando as equações de Sekkat e de KWW. Usando as constantes de tempo obtidas dos ajustes das curvas experimentais de birrefringência, foi possível calcular as energias de ativação de Arrheniu dos processos de foto orientação. Os resultados obtidos para a energia de ativação e da dinâmica de formação e decaimento das medidas de birrefringência para os diferentes filmes foram comparadas e discutidas. / Abstract: Langmuir monolayers, Langmuir-Blodgett (LB) films and thin filmes prepared by casting (auto standing films) from a series of azocrown ethers molecules were studied. Films were characterized using UV-Vis and FTIR spectroscopy and Raman scattering techniques. The compound 29-diazocrown ether with n-octyl substituent was the only azocrown ether molecule that allowed us to prepare high quality LB films having suitable optical properties for photo induced birefringence studies. On birefringence measurements using LB films and standing films of 29-diazocrown ether several experimental parameters were varied: number of monolayer of BL films, thickness of the auto standing film, excitation light intensity and temperature. It was found for the dynamics of formation and decay of the birefringence is much faster for LB films when compared with the auto standing films. The experimental curves of birefringence signals for LB films were fitted using the Debye and Kohlrausch-Williams-Watts (KWW) functions while the experimental curves for the auto standing films were fitted using the Sekkat and KWW functions. From the obtained time constants of fittings the Arrehnius activation energy and the dynamics of the formation and decay of the birefringence for the films were compared and discussed. / Mestre
1123

Preparação e caracterização de filmes finos do tipo 'Pb IND. 1-x-yCa IND. xSr IND.yTiO IND. 3' /

Pontes, Debora da Silva Lima. January 2008 (has links)
Orientador: Elson Longo da Silva / Banca: Sonia Maria Zanetti / Banca: Alberthmeiry Teixeira Figueiredo / O Programa de Pós-Graduação em Ciência e Tecnologia de Materiais, PosMat, tem caráter institucional e integra as atividades de pesquisa em materiais de diversos campi da Unesp / Resumo: Neste trabalho de dissertação de mestrado foram preparadas amostras do sistema 'Pb IND. 1-x-yCa IND. xSr IND.yTiO IND. 3' (PCST) com x = 0.05, 0,15, 0,35 e y = 0,05, 0.15, 0,35, utilizando-se o método dos precursores poliméricos e, a partir desse material, produzir amostras cerâmicas e filmes finos nanoestruturados e caracterizar suas propriedades estruturais, microestruturais e elétricas. A caracterização estrutural foi realizada utilizando as técnicas de difração de raios X, espectroscopia Raman e espectroscopia na região do infravermelho. Os filmes finos foram preparados pela técnica "spin-coating" sobre substrato de 'Si/SiO IND. 2/Ti/Pt'. A temperatura de cristalização foi de 600ºC. A cristalização de todos os filmes finos e pó apresentaram estrutura do tipo perovisquita sem a presença de uma segunda fase. Foi possível obter com sucesso um sistema complexo de incorporação de dois diferentes íons '(Ca POT. 2+ e Sr POT. 2+)' no sitio A, em substituição aos íons 'Pb POT. 2+' para o sistema 'Pb IND. 1-x-yCa IND. xSr IND.yTiO IND. 3' na forma de filme fino e pó, sem a separação de fases tais como 'PbTiO IND. 3, CaTiO IND. 3, SrTiO IND. 3', ou até mesmo fase complexas como '(Pb,Sr)TiO IND. 3' ou '(Pb,Ca)TiO IND. 3'. Os sítios A localizam-se dentro de um dodecaedro '(AO IND. 12)' de doze oxigênios enquanto o sitio B no interior de um octaedro regular '(BO IND.6)' constituído de oito oxigênios. Portanto, as distorções ocorridas nestas estruturas produzem importantes mudanças e surgimento de novas propriedades elétricas que encadeiam grande interesse tecnológico e cientifico. As propriedades ferroelétricas foram fortemente influenciadas pela presença desses dois íons '(Ca POT. 2+ e Sr POT. 2+)' em substituição aos íons 'Pb POT. 2+'. Levando o sistema a uma completa ausência de natureza ferroelétrica a temperatura ambiente. / Abstract: On this master's degree dissertation samples of the system 'Pb IND. 1-x-yCa IND. xSr IND.yTiO IND. 3' (PCST) with x = 0.05, 0.15, 0.35 and y = 0.05, 0.15, 0.35 were prepared through the polymeric precursors method. From this material, ceramic samples and thin films were produced and their structure, microstructure and electrical properties were assessed. The structural characterization was done using X-ray diffraction, Raman spectroscopy and spectroscopy techniques on the infrared region. The films were prepared through the spin-coating technique on 'Si/SiO IND. 2/Ti/Pt' substrate and its crystallization temperature was 600ºC. All thin films and powder showed structure like perovskite without a second phase. A complex incorporation system of two different ions '(Ca POT. 2+ e Sr POT. 2+)' at site A was successfully achieved, replacing the 'Pb POT. 2+' ions on the 'Pb IND. 1-x-yCa IND. xSr IND.yTiO IND. 3' system as thin film and powder with no partition of phases such as 'PbTiO IND. 3, CaTiO IND. 3, SrTiO IND. 3', or even more complex ones as '(Pb,Sr)TiO IND. 3' or '(Pb,Ca)TiO IND. 3'. The sites A were found in a '(AO IND. 12)' dodecahedron of twelve oxygens, and the site B was discovered in a regular octahedron formed by eight oxygens. Therefore the distortions on these structures triggered relevant changes and new electrical properties which promote great technological and scientific interest. It is noteworthy that the ferroelectric properties were heavily influenced by the presence of these two ions '(Ca POT. 2+ e Sr POT. 2+)' replacing the 'Pb POT. 2+' ions, leading the system to an absolute absence of ferroelectric nature at room temperature. / Mestre
1124

Propriedades estruturais e ópticas de filmes finos a-C:H:CI obtidos por deposição à vapor químico assistido por plasma e deposição e implantação iônica por imersão em plasma /

Turri, Rafael Gustavo. January 2011 (has links)
Orientador: Steven Frederick Durrant / Banca: José Humberto Dias da Silva / Banca: Daniel Acosta Avalos / O Programa de Pós Graduação em Ciência e Tecnologia de Materiais, PosMat, tem caráter institucional e integra as atividades de pesquisa em materiais de diversos campi / Resumo: Foram produzidos filmes finos amorfos hidrogenado com incorporação de cloro por duas técnicas: (i) Deposição à Vapor Químico Assistido por Plasma (PECVD) e (ii) Implantação Iônica e Deposição por Imersão em Plasma (PIIID). Os filmes foram produzidos a partir de misturas de C2H2, CHCI3 e Argônio. Foram investigados os efeitos da implantação iônica na estrutura química e nas propriedades ópticas dos filmes. As alterações na estrutura dos filmes foram analisadas por Espectroscopia de infravermelho por transformada de Fourier (FTIR) e Espectroscopia de fotoelétrons de raio-X (XPS). Os efeitos provocados nas propriedades ópticas foram estudados pela comparação de constantes ópticas calculadas a partir de espectros de transmitância Ultravioleta - Visível - Infravermelho próximo. Foram calculados o índice de refração, o coeficiente de absorção dos filmes o e gap óptico por modelos distintos. As espessuras dos filmes foram medicas diretamente por perfilometria e os resultados foram comparados com valores obtidos por cálculo indireto utilizando os dados espectrais. Alerações de molhabilidade que foram estudadas a partir de medidas de ângulo de contato. Os resultados das caracterizações de FTRI e XPS revelaram a presença de cloro nos filmes. O índice de refração dos filmes produzidos por PIIID apresentou a tendência de ser maior do que dos filmes produzidos por PECVD sob as mesmas condições. O aumento do teor de CHCI3 na mistura utilizada na produção dos filmes resultou no aumento do gap óptico e no aumento na taxa de deposição dos filmes para os dois processos. Os filmes clorados produzidos pelos dois processos apresentaram ângulo de contato relativamente próximo ao ângulo de contato de PVC comercial / Abstract: Amorphous hydrogenated carbon thin films also containing chlorine were produced by two techniques: (i) Plasma Enhanced Chemical Vapor Deposition (PECVD), and (ii) Plasma Immersion Ion Implantation and Deposition (PIIID). The films were produced from mixtures of C2H2 and Ar. The effects of ion implantation on the film structural and optical properties were investigated. Differences in the chemical structure of the films were revealed by Fourier transform infrared spectroscopy (XPS). Changes produced in the optical proerties were studied by comparison of the optical constants calculated from Ultraviolet - Visible - Near Infrared transmittance spectra. The refractive index, absorption coefficient and optical gap were calculated using distinct models. The thicknesses of the films were measured directly by perfilometry and the results compared with values obtained by indirect calculations based on the spectral data. Alterations in wettability were examined via contact angle measurements. Evidence for the presence of chlorine in the films was obtained from the FTIR and XPS spectra. The refractive indices of the films produced by PIIID tended to be higher than those of the films produced by PECVD under the same conditions. Increases in the optical gaps and the deposition retes of films produced by the two processes were observed as the proportion of CHCI3 in the plasma feed increased. The chlorinated films produced by the two process exhibited contact angles relatively close to that of commercial PVC / Mestre
1125

Estudo detalhado da síntese de melanina em DMSO

Xavier, Pedro Henrique Petri [UNESP] 18 August 2011 (has links) (PDF)
Made available in DSpace on 2014-06-11T19:30:18Z (GMT). No. of bitstreams: 0 Previous issue date: 2011-08-18Bitstream added on 2014-06-13T21:00:47Z : No. of bitstreams: 1 xavier_php_me_bauru.pdf: 1141916 bytes, checksum: e501ac7e99e0860ba4a7bb528e003322 (MD5) / Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq) / A síntese DMSO foi proposta a cerca de seis anos e o resultado mais importante foi o fato da melanina obtida ser solúvel em DMSO o que permitiu a produção de filmes finos de alta qualidade. Para tal fim, a L-Dopa foi utilizada como reagente principal, em sínteses onde se variou: a concentração de perióxido de benzoíla e a concentração de água no DMSO. A síntese em água foi realizada para fins de comparação. A síntese em DMSO apresentou-se mais lenta em comparação a síntese de melanina em água através dos resultados obtidos pela técnica UV-Vis. O peróxiso de benzoíla tem influência significativa na síntese, agindo diretamente na oxidação do DMSO e na oxidação da L-Dopa. Teste de solubilidade com diferentes solventes foi realizado nas amostras de H2O-melanina, DMSO-melanina recém sintetizada e DMSO-melanina envelhecida com tempo de estocagem de quatro anos. Os solventes utilizados foram; água, DMSO, DMF, THF, acetonitrila e acetato de etila. Os resultados mostraram a insolubilidade da H2O-melanina e da DMSO-melanina envelhecida em todos os solventes e somente a solubilidade da DMSO-melanina recém sintetizada no solvente DMSO foi observada. Indicando novamente que as amostras possuem estruturas diferentes e que a DMSO-melanina sofre alterações estruturais quando exposta no ar. Nos espectros da FTIR, grupos sulfonados só foram observados na DMSO-melanina recém sintetizada, que desapareceram nas amostras envelhecidas, e que não estão presentes na H2O-melanina. Ou seja, os grupos sulfonados responsáveis pela solubilidade da DMSO-melanina com o passar do tempo sofrem degradação e saem da estrutura da DMSO-melanina, explicando assim a insolubilidade da amostra de DMSO-melanina envelhecida. O mesmo foi observado para os espectros de 13C RMN. Para entender esse processo de degradação utilizamos o NaOH2 cuja a ação é a retirada dos grupos... / Synthesis in DMSO was proposed about six year and the most important result was the fact that it is soluble in DMSO which allowed the production of thin films of high quality. To this end, the L-Dopa was used as primary reagent in primary reagent in syntheses where varied: the concentration of benzoyl peroxide and water concentration in DMSO. The synthesis was carried out in water for comparison purposes. The synthesis presented in DMSO is slower than the synthesis of melanin in water for analysis of the results obtained with the technique of UV-vis. When we analyzed the effect of the concentration of benzoyl peroxide in the synthesis, we found that the concentration of 0.5 moles of benzoyl peroxide gave summary more efficient to malanin in DMSO. Benzoyl peroxide has significant influence on the synthesis, acting directly on the oxidation of DMSO and the oxidation of L-Dopa. Solubility test was carried out with different solvents in the samples of H2O-melanin, DMSO-melanin newly synthesized and old DMSO-melanin with storage time of four years. The solvents used were: water, DMSO, DMF, THF, acetonitrile and ethyl acetate. The results showed the insolubility of H2O-melanin and old DMSO-metanin in all solvents and only the solubility of newly synthesized DMSO-melanin in the solvent DMSO was observed. Indicating again that the samples have different structures and that the DMSO-melanin undergoes structural changes when exposed to air. In FTIR, sulphonated groups were only observed in DMSO-melanin newly synthesized, which disappeared in the old samples, which are not present in the H2O-melanin. That is, the sulfonated groups responsible for the solubility in DMSO-melanin suffer degradation over the time and leave the structure of DMSO-melanin, thus explaining the insolubility of old DMSO-melanin. A chemical model was proposed, using tools... (Complete abstract click electronic access below)
1126

High throughput combinatorial screening of Cu-Zn-Sn-S thin film libraries for the application of Cu2ZnSnS4 photovoltaic cells

Hutchings, K D 07 November 2014 (has links)
The naturally occurring mineral of Cu2ZnSnS4 (CZTS) is a promising alternative absorber layer for thin film based photovoltaic devices. It has the remarkable advantage that it consists of abundant, inexpensive and non-toxic elements compared to its crystallographically related and highly successful counterparts: the Cu(In,Ga)(S,Se)2 (CIGSSe) and CuIn(S, Se)2 (CISSe) material systems. Therefore, there is real commercial potential for reduced material costs and improved device efficiencies. A two-stage high throughput combinatorial process for the fabrication of Cu-Zn-Sn-S thin film libraries is presented, which consists of either sequentially stacking or co-depositing Cu,Sn and Zn precursor layers by DC magnetron sputtering followed by a sulphurisation process. Sputtering conditions and target-substrate geometry are developed to give compositionally graded Cu-Zn-Sn precursor layers spanning a wide spatial region around the point of stoichiometry. Conversion into Cu-Zn-Sn-S libraries is achieved by thermally evaporating a uniform layer of sulphur directly onto the metal alloy and annealing the sample at 500 °C in a furnace. Effects of the precursor composition on the structural properties of the films prior to the incorporation of sulphur are investigated. The sulphurised libraries are then studied by Scanning electron microscopy (SEM), X-ray diffraction (XRD) and Raman spectroscopy as a function of composition, to assess the effects on morphology and phase formation. Observations of changes in lattice parameters and crystallinity are clear. The opto-electronic and electrical properties of the CZTS film libraries are measured using photoconductivity and hot point probe techniques, respectively. Changes in the band gap and conductivity type are studied as a function of atomic ratios. Based on high performing compositions, devices have been fabricated with the highest achieving cell at 1.26 %. The observations are discussed in the context of the particular compositions and synthesis conditions, and recommendations are made for further work.
1127

Reactive filtered arc evaporation

Mustapha, Nazir Mohamad January 1993 (has links)
Conventional physical vapour deposition (PVD) techniques usually result in films of lower quality than the corresponding bulk material. A major problem with PVD films is the presence of columns and voids throughout the thickness of the film. The films may have a low packing density, low micro-hardness and in many cases poor adhesion to the substrate. Many of these problems are a direct consequence of the low energy of the depositing atoms arriving at the substrate during film growth. The resulting film porosity gives rise to a reduction in mechanical strength, and in the case of dielectric optical films, a reduction in the refractive index. The properties of deposited films are greatly improved when the substrate or the growing film is bombarded with more energetic particles. An ideal deposition process requires a high flux of film atoms with an energy of approximately 5-50 eV in order to achieve sufficient surface mobility at the substrate to overcome columnar growth.
1128

Evaluation of Thin-Slice Axial Magnetic Resonance Imaging on the Diagnostic Accuracy of Meniscus Tears

Albert, Andrew 28 March 2018 (has links)
A Thesis submitted to The University of Arizona College of Medicine - Phoenix in partial fulfillment of the requirements for the Degree of Doctor of Medicine. / This investigation assessed the diagnostic accuracy of thin-slice (1mm) axial Magnetic Resonance Imaging (MRI) in the detection and classification of meniscal tears. Meniscal injuries are a common reason for knee pain and the use of MRI has become standard in their assessment. However, the classification of tears and not merely the detection of lesions has become increasingly important to surgeons in deciding between surgery and conservative management. There is a growing body of literature examining the utility of axial MR images in aiding radiologists to more accurately describe and classify morphological characteristics of meniscus tears. However, the thick- slice (4-5mm) axial sequences utilized at many institutions typically only produce 1-2 images on which the menisci can be visualized, which does not provide the required detail to accurately describe the morphological characteristics of meniscal lesions. This study adds to the growing body of literature examining the diagnostic capabilities of MRI with TSAi to accurately describe meniscal tear morphologies. Imaging reports from 107 patients with clinically suspected meniscus injuries who underwent MRI with thin-slice axial imaging were compared to arthroscopic findings using receiver operating characteris (ROC) analysis to assess the diagnostic accuracy of MRI with thin- slice axial imaging (TSAi). The sensitivity and specificity of MRI with TSAi for meniscal tear detection were found to be 91% and 37.5% respectively. Furthermore, MRI with TSAi was highly specific for bucket handle (98.5%) and root ligament tears (94.1%). The findings of our investigation indicate that MRI with TSAi may assist surgeons in determining the need for operative versus conservative management. MRI with TSAi may be particularly helpful in the case of root tears, which were not as readily identified with traditional MRI techniques and often require surgical intervention due to morbidity associated with unrepaired root tears.
1129

Fabrication and characterization of CuInSe₂/CdS/ZnO thin film solar cells

Chenene, Manuel Luis 20 August 2012 (has links)
M.Sc. / I-III-VI2 compound semiconductors are important photovoltaic (PV) materials with optical and electrical properties that can be tuned for optimum device performance. Recent studies indicated that the efficiencies (1) > 18%) of CuInSe2/CdS/ZnO thin film devices are in good agreement with that of standard silicon cells. In this study, CuInSe 2 absorber films with excellent material properties were produced by relatively simple and reproducible two-stage growth techniques. In these approaches, metallic precursors (Cu/InSe, InSe/Cu, Cu/InSe/Cu and InSe/Cu/InSe) were deposited by thermal evaporation from specially designed graphite heaters at temperatures around 200°C. In the second stage of the process, the alloys were exposed to elemental Se vapour or H2Se/Ar gas. A systematic study was conducted in order to determine optimum growth parameters for the different deposition processes. Optimum material properties (homogeneous and dense films with a high degree of compositional uniformity) were obtained when InSe/Cu/InSe precursors were selenized in elemental Se vapour or H2Se/Ar gas. Comparative studies also indicated that the reaction kinetics is enhanced when H2Se/Ar is used as chalcogen source. Fully selenized films were obtained at temperatures as low as 450°C in a H2Se/Ar atmosphere, compared to temperatures of 600°C in the case of Se vapour. The optical and electrical properties of the absorber layers were accurately controlled by small variations in the bulk composition of the films. A standard CdS/ZnO window layer technology was also developed in our laboratories and preliminary solar cell devices were fabricated and evaluated.
1130

Optimization of quaternary and pentenary chalcopyrite for applications in thin film solar cells

Chenene, Manuel Luis 08 November 2011 (has links)
Ph.D. / One of the solutions to the high cost of solar modules is the development of thin film solar cell technologies, which enable material saving, few processing steps, good stability in outdoor testing, high conversion efficiency and flexibility for large area coatings. Polycrystalline CuInSe2 (CIS) thin films and related quaternary and pentenary compounds such as Cu(In,Ga)Se2 (CIGS) and Cu(In,Ga)(Se,S)2 (CIGSS) are the most promising thin film candidates to fulfil the requirements of economically viable solar modules. Presently CIS, CIGS and CIGSS thin film solar cells are prepared mostly by two – stage deposition processes, where Cu-In-Ga alloys are deposited, followed by selenization and/or sulfurization using H2Se/Ar and/or H2S/Ar gases, Se and/or S vapours. Key problems related to this approach are (1) the widely reported compositional change and loss of material during the annealing and selenization stages, and (2) the formation of a graded film structure with most of the Ga residing at the back of the film, due to the difference in the reaction rates between the binary selenides. The present study aims to develop CIGS quaternary and CIGSS pentenary thin film absorbers which are substantially homogeneous and single phase. In order to achieve this aim different deposition processes were developed. This included thermal evaporation of pulverized compound materials from a single crucible with and without subsequent reaction of the precursors in Se vapour or H2Se/Ar atmosphere. Alternatively, controlled partial selenization/sulfurization of the Cu-In-Ga magnetron sputtered precursor films under controlled conditions of reaction time, temperature and gas phase concentration were applied to produce CIGSS films. The latter approach allowed homogeneous incorporation of Ga and S species into CIS compound material, and with that a corresponding increase of band gap of the material in the active region of the solar cell. CIGS quaternary and CIGSS pentenary based solar cells were completed by depositing a CdS buffer layer of around 50 nm thickness, high resistivity ZnO and low resistivity Al – doped ZnO with thicknesses of about 50 nm and 0.5 μm respectively. I-V measurements on fabricated solar cells, under standard A.M. 1.5 conditions, demonstrated good solar cell device quality with efficiencies of about 10 % and 15% respectively.

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