Three-dimensional topological insulators (TIs) are a class of materials for which the bulk is insulating, while the surface is necessarily metallic. A band inversion that occurs in the presence of spin-orbit coupling, and conduction and valence bands with opposite parities are necessary conditions for the existence of this class of materials. The metallicity of the surface states appears as a consequence of the topology of the bulk and these states are characterized by massless Dirac dispersions and helical spin polarization that protect the surface states against backscattering. The robustness of the topological surface states further implies that they are not destroyed by non-magnetic impurities or defects. Since their initial conception, a vast amount of theoretical studies have predicted very interesting features stemming from the topological surface states. An example of that can be found when breaking the time-reversal symmetry by introducing magnetic order in the system, which can lead to exotic phenomena such as the quantum anomalous Hall effect. The properties exhibited by these systems are expected to be of high importance both in fundamental research as well as in technological applications. However, the major difficulty remains the access to purely topological surface states. The remaining bulk conductivity of the TIs such as Bi2Se3, Bi2Te3 or Sb2Te3 still hinders the experimental realization of some of the predicted phenomena. This highlights the need of high-quality bulk-insulating materials with ultra-clean surfaces and interfaces, which can only be achieved with delicate sample preparation and characterization methods. The present work is part of the effort to fabricate high-quality TI films in a controlled manner. This shall then allow more complex investigations, such as interface effects and possibilities to engineer the band structure of the TIs. The former will be explored mainly in the form of heterostructures of Bi2Te3 and magnetic insulating layers, whereas the latter will focus on the fabrication of Sb2Te3/Bi2Te3 heterostructures. Most of the important properties of the samples are measured under ultra-high vacuum conditions, ensuring reliable results. Furthermore, in situ capping with ordered Te also allows for more sophisticated ex situ experiments. In a first step, the optimization of Bi2Te3 thin films grown on Al2O3 (0001) substrates was explored. Spectroscopic and structural characterization measurements showed that it is possible to obtain consistently bulk-insulating TI films with good structural quality, despite the lattice mismatch between Bi2Te3 and Al2O3 (0001). Magnetoconductance measurements showed a prominent weak anti-localization effect, confirming the existence of two-dimensional surface states. In order to explore the consequences of breaking the time-reversal symmetry characteristic of TIs, Bi2Te3 was interfaced with several ferro- or ferrimagnetic insulating (FI) layers in heterostructures. EuO, Fe3O4, Y3Fe5O12 and Tm3Fe5O12 were chosen as possible candidates. Systematic optimization and characterization studies showed that interfaces of Bi2Te3 and EuO, as well as Fe3O4 on top of Bi2Te3, yield poor quality samples with significant chemical reactions between the layers. Nevertheless, high-quality Bi2Te3 could be grown on Fe3O4 (001), Fe3O4 (111), Y3Fe5O12 (111) and Tm3Fe5O12 (111). Clean interfaces and intact top topological surface states were confirmed by photoemission spectroscopy. Moreover, transport signatures of a gap opening in the topological surface states were found, namely a suppression of the weak anti-localization effect and the observation of the anomalous Hall effect. However, x-ray circular magnetic dichroism (XMCD) was not observed for any of the heterostructures. A key conclusion from this study is that the ferromagnetism induced by the magnetic proximity effect is too weak to be detected by XMCD. On hindsight, one can infer that the magnetic proximity effect cannot be strong since the bonding between the TI and the magnetic insulator substrate is of the van der Waals type, and not covalent like in transition metal oxides or metallic heterostructures. It is known that a charge compensation between electron- and hole-doping can be achieved when combining Bi2Te3 and Sb2Te3, which can also tune the position of the Dirac point. With this goal in mind, the fabrication of ternary (Bi(x)Sb(1−x))2Te3 compounds and Sb2Te3/Bi2Te3 heterostructures was explored in the next step. Although pure Sb2Te3 and (Bi(x)Sb(1−x))2Te3 did not yield good quality samples, the fabrication of Sb2Te3/Bi2Te3 heterostructures emerged as a promising alternative route. Photoelectron spectroscopy allowed not only to identify the crucial role of the first few Sb2Te3 top layers, which modulate the topological surface states, but also to characterize the intermixing of the TI layers at the interface. In a final study, Fe(1+y)Te thin films were grown on MgO (001) substrates employing a Te-limited growth method. This allowed to obtain nominally stoichiometric films, as evidenced by reflection high-energy electron diffraction, x-ray absorption spectroscopy, XMCD and x-ray diffraction measurements. This preliminary study opens the way for the investigation of TI/superconductor interfaces and to delve into the topological superconductivity arising from the proximity effect.

In the mid-2000s, a new quantum state of topological insulators was proposed. It deeply refreshed the traditional understanding of electronic band structure, which has been the most fundamental tool to classify metals and insulators. Topological insulators with non-trivial topological charges can host robust surface states or edge states located in the bulk bandgap. To understand this new state, an understanding of the bandgap is not sufficient, and it led to the new field of topological band theory in condensed matter physics. The development of electronic band structure theory also inspired the understanding of topological band theory from the chemical point of view and results in the new topic of topological chemistry. The discovery of topological insulators motivated extensive studies of solid-state materials from topological theory, leading to many topological materials in both insulators and metals. In the last 15 years, various topological materials characterized by different topological electronic structures have been discovered. One of the most important features shared by all different topological materials is the topologically protected non-trivial surface states (TSSs). Such TSSs are essentially different from the dangling bonds because they connect to conduction bands and valence bands in insulators or bulk band crossings in metals. The extra perturbation can only change their detailed shape but not remove them. This characteristic makes TSSs attractive for practical applications in the quantum information process, data storage, and energy conversion. In particular, the robust surface state is an attractive property that benefits energy-related catalysis. The last few years have seen research in this field with a focus on developing efficient topological material catalysts for hydrogen evolution reaction (HER), oxygen evolution reaction (OER), and reduction. To date, the topological catalyst has become a new frontier in both chemistry and materials science. Within the scope of this Ph.D. thesis, several topological semimetals and their HER activity are studied with the help of density functional theory, electrochemical theory, and topological band theory, combined with experimental measurements performed within the workgroup. The spectrum of performed projects ranges from the theoretical design of the high-efficiency hydrogen evolution catalyst with the guidance of topology in close collaboration with experiments and in-depth understanding of the relationship between topological properties and catalysis.

Interactions between the microscopic constituents of a solid---a many-body system--- can lead to novel phases and exotic physical phenomena like fractionalization, topological order, quantum spin liquids, emergent gauge field, etc.. The concept of frustration provides a ground for such exotic phenomena. Frustration can prevent a many-body system from establishing long-range order down to the lowest temperatures due to competing interactions. Instead, competing interactions may result in disordered and liquid-like phases of matter that provide the vacuum for fractional excitations. The absence of any order parameter in strongly frustrated systems---due to not breaking any symmetry spontaneously--- immediately raises the question about possible experimental probes of spin-liquids and their fractional excitations. Dynamic probes, like inelastic neutron scattering or Raman scattering, provide an experimental method to detect signatures of fractionalised quasiparticles. The energy and momentum transferred in a scattering event is split between the fractional quasiparticles. On the theory side, computing such dynamical signatures beyond one spatial dimension is generally a difficult task. In this thesis, numerical methods like density matrix renormalisation group and matrix product states are used to study strongly frustrated magnets and their dynamics in a non-perturbative way. This thesis covers two physical models in the context of frustration and emergent gauge fields. Firstly, the Kitaev model of spin-1/2 degrees of freedom subject to strongly anisotropic spin exchange. The Kitaev model features quantum spin liquid ground states with fractionalization of spins into Majorana fermions and Z_2-fluxes---the visons of an emergent Z_2 gauge theory. The main questions addressed here concern the stability of the quantum spin liquid phase upon adding perturbations relevant in magnetic compounds such as Heisenberg or the symmetric-offdiagonal Gamma exchange. Applying a magnetic field drives the Kitaev model into a topologically ordered phase. The excitations and dynamical signatures within the spin liquid, the topologically ordered phase, and within ordered phases are studied. Secondly, a classical minimal model of the proton configuration in water ice is studied. The ice rules, a local constraint describing the low energy manifold, result in emergent Maxwell's equation. Upon applying an external electric field along certain axis, a polarization plateau occurs in which the remaining degrees of freedom can be described by dimers on two-dimensional lattices.

Die Transporteigenschaften eines Elektronengases mit reduzierter Dimensionalität werden von den Welleneigenschaften der Elektronen bestimmt. Dies ermöglicht es, verschiedene Quanteneffekte, wie Quanteninterferenz, zu beobachten. Im ersten Teil dieser Arbeit werden geätzte Quantenringe und eindimensionale (1D) Verengungen, basierend auf AlxGa1-xAs/GaAs-Heterostrukturen, hinsichtlich ihrer Transporteigenschaften untersucht. Messungen des thermischen Rauschens im Gleichgewichtszustand zeigen, dass der Erwartungswert mit den Rauschspektren aller 1D Verengungen übereinstimmt, jedoch um bis zu 60 % bei allen Quantenringen überschritten wird. Rauschmessungen im thermischen Nichtgleichgewicht ergeben, dass der Wärmefluss in Quantenringen mithilfe einer globalen Steuerelektrode (Topgate) an- und ausgeschaltet werden kann. Die magnetische Widerstandsänderung der Quantenringe zeigt Oszillationen, die dem Aharonov-Bohm-Effekt zugeordnet werden. Die Beobachtbarkeit dieser Oszillationen hängt stark von dem Abkühlvorgang der Probe ab und die Oszillationen zeigen Hinweise auf ein Schwebungsmuster sowie auf Phasenstarre. Im zweiten Teil der Arbeit werden die Oberflächenzustände von exfolierten Bi2Se3 Mikroflocken untersucht. Für Mikroflocken mit metallischen Temperaturabhängigkeiten des Widerstandes wurde schwache Anti-Lokalisierung beobachtet. Diese Beobachtung deutet darauf hin, dass sich die magnetische Widerstandsänderung weniger ausschließlich aus den 2D Oberflächenkanälen als vielmehr aus einem geschichtetem Transport von 2D Kanälen im Volumenkörper zusammensetzt. Eine Mikroflocke mit halbleitenden Eigenschaften zeigt keine Hinweise auf solch einen geschichteten 2D Transport und es wird angenommen, dass ihre magnetische Widerstandsänderung ausschließlich von den 2D Oberflächenzuständen verursacht wird. / The transport properties of an electron gas with reduced dimensionality are dominated by the electron’s wave nature. This allows to observe various quantum effects, such as quantum interference. In the first part of this thesis etched quantum rings and one-dimensional (1D) constrictions, based on AlxGa1-xAs/GaAs heterostructures, are investigated with respect to their transport properties. Thermal noise measurements in equilibrium show that the expectation value agrees with the noise spectra of all 1D constrictions but is exceeded by up to 60 % for the noise spectra of all quantum rings. Noise measurements in thermal non-equilibrium reveal that the heat flow can be switched on and off for a quantum ring by a global top-gate. The measured magnetoresistance of the quantum rings shows oscillations that are attributed to the Aharonov-Bohm effect. The observability of these oscillations strongly depends on the cooling process of the sample and the oscillations show indications of a beating as well as phase rigidity. In the second part of the thesis the surface states of exfoliated Bi2Se3 microflakes are studied. For microflakes that show a metallic temperature dependence of the resistance weak anti-localization is observed. This observation suggests that the magnetoresistance is a result of layered transport of 2D channels in the bulk rather than just the surface 2D channels. A microflake with semiconducting characteristics does not show indications of such a 2D layered transport and its magnetoresistance is considered to be carried by the 2D surface states only.

Doped IrTe2 is considered a platform for topological superconductivity and therefore receives currently a lot of interest. In addition, the superconductivity in these materials exists in close vicinity to electronic order and the formation of molecular orbital crystals, which we explore here by means of high-pressure single crystal x-ray diffraction in combination with density functional theory. Our crystallographic refinements provide detailed information about the structural evolution as a function of applied pressure up to 42 GPa. Using this structural information for density functional theory calculations, we show that the local multicenter bonding in IrTe2 is driven by changes in the Ir-Te-Ir bond angle. When the electronic order sets in, this bond angle decreases drastically, leading to a stabilization of a multicenter molecular orbital bond. This unusual local mechanism of bond formation in an itinerant material provides a natural explanation for the different electronic orders in IrTe2. It further illustrates the strong coupling of the electrons with the lattice and is most likely relevant for the superconductivity in this material.

In dieser Arbeit wird das Design und die Präparation von nicht-klassischen Zuständen von Licht in verschiedenen Szenarien untersucht. Zunächst wird die theoretische Beschreibung eines Interferometers entwickelt, welches für die Messung der Teilchenaustauschphase von Photonen entworfen wurde. Die Analyse der experimentellen Daten offenbart den bosonischen Charakter von Photonen, sowie die geometrische Phase, welche mit dem physischen Austausch zweier Quantenzustände assoziiert ist. Nach dieser Feststellung der Austauschsymmetrie von Zweiphotonenzuständen folgt die Ausarbeitung der Theorie über die Propagation von Mehrphotonenzuständen in Multiportsystemen. Dabei offenbaren sich hoch-dimensionale, synthetische, gekoppelte Strukturen die sich aus der Mehrphotonenanregung von diskreten Systemen ergeben. Basierend auf diesen Resultaten wird eine konkrete Anwendung der Theorie im Kontext von nicht-hermitischen Systemen formuliert. Dabei ergeben sich sogenannte “exceptional points” höherer Ordnung, welche Anwendungen im Bereich der Sensorik finden und ferner nur im Raum der Photonenanzahlzustände von diskreten Systemen realisiert werden können. Neben der Sensorik ist der Transport von Lichtzuständen ein wichtiger Aspekt in der Verarbeitung von Quanteninformationen. In dieser Hinsicht werden hier Photonische Topologische Isolatoren untersucht, welche eine rückstreuungsfreie Propagation entlang ihrer Ränder erlauben. Es wird gezeigt, dass partiell kohärentes Licht, Gaussisch und Nicht-Gaussisch verschränkte Zweiphotonenzustände einen solchen topologischen Schutz genießen können. Dies gilt unter der Vorraussetzung, dass die Anfangsanregung in einem wohldefinierten Bereich des topologischen Schutzes liegt, wodurch das “klassische” Bandlücken-kriterium erweitert und gestärkt wird. / In this work we study the design and preparation of non-classical states of light in several scenarios. We begin by developing the theoretical description of an interferometer, which is designed to measure the particle exchange phase of photons. The analysis of the experimental data reveals the bosonic nature of photons, as well as the geometric phase associated with the physical exchange of the quantum states of two photons. Having established the exchange symmetry of two-photon states, we proceed to develop the theory of multi-photon states propagating in multi-port systems. We unveil the high- dimensional synthetic coupled structures that arise via the multi-photon excitation of discrete systems. Using these results, we formulate an application of the theory in the context of non-hermitian systems. We find so-called high-order exceptional points, which find applications in sensing and can only be achieved in the photon-number space of discrete systems. Apart from sensing, an important ingredient for the processing of quantum information is the transport of light states. In this regard, we consider photonic topological insulators, which allow the back-scattering-free propagation along their edges. We show that partially coherent light, Gaussian- as well as non-Gaussian two-photon entangled states can enjoy such a topological protection, provided that the initial excitations fit inside a well defined topological window of protection, which strengthens the “classical” band-gap protection criterion.

Topological insulators are a novel class of quantum materials wherein the bulk of the material is an insulator, while the surface or edge states are quantum mechanically protected and conducting. This class of materials offers a lot of promise in the fields of quantum computing and spintronics due to their inherent ability to conduct electrons without the loss of any energy over longer distances, thereby theoretically being able to solve the problems of heat accumulation and leaking of electrons due to tunnelling in current devices. To this end, this work focussed on three main objectives: (a) investigate known bismuth structures as hosts for topological and quantum effects, in particular as potential topological insulators; (b) exploring the possibilities of magnetic substitutions in both known weak 3D topological insulators and further bismuth subhalide structures; and (c) gaining an understanding of the formation processes of the aforementioned substitutions into the bismuth subhalide compounds through extensive thermal analyses. This was realised by investigating Bi2[PtBi6I12]3 and Bi14Rh3I9 as host structures, with the former being a topologically trivial compound and the latter a weak 3D topological insulator. Due to previous difficulties in substituting magnetic cations into Bi14Rh3I9, the initial focus of this work lay in substituting magnetic cations into Bi2[PtBi6I12]3. This work then showed that not only could infinite cluster strands containing the [PtBi6I12]2- clusters be formed with Pb, Sn and Sb in the counter-cation site between them, but that magnetic cations such as Mn, Fe and Co could also be substituted into bismuth subhalide structures. The latter in particular gave rise to novel physical properties in this class of compounds and illuminated and helped explain the previous challenges in substituting magnetic cations into the bismuth subhalides.

Truss-like shapes can occur in topology optimization described by an assembly of finite elements or its boundary represented as a polygon mesh. Such shape description does not cover a common engineering parametrization like the lines of a frame structure and its corresponding cross-section. This article addresses the truss-parametrization of such optimization using curve skeletons and Meta Balls. While the curve skeleton is common in the truss-parametrization, including Meta Balls can lead to an overall implicit and smooth shape description.

Robust states exist at the interfaces between topologically trivial and nontrivial phases of matter. These boundary states are expression of the nontrivial bulk properties through a connection dubbed the bulk-boundary correspondence. Whether the bulk is topological or not is determined by the value of a topological invariant. This quantity is defined with respect to symmetries and dimensionality of the system, such that it takes only quantized values. For static topological phases that are realized in ground-states of isolated, time-independent systems, the topological invariant is related to the properties of the Hamiltonian operator. In contrast, Floquet topological phases that are realized in open systems with periodical pumping of energy are topologically characterized with a unitary Floquet operator i.e., the time-evolution operator over the entire period. Topological phases of matter can be distinguished by the dimensionality of robust boundary states with respect to the protecting bulk. This dissertation concerns recently discovered higher-order topological phases where the difference between dimensionalities of bulk and boundary states is larger than one. Using analytical and numerical single-particle techniques, we focus on instances where static higher-order topology can be understood with insights from the mature field of Floquet topology. Namely, even though static systems do not admit a Floquet description, we find examples of higher-order systems to which certain unitary operators can be attributed. The understanding of topological characteristics of these systems is therefore conditioned by the knowledge on topological properties of unitary operators, among which the Floquet operator is well-known. The first half of this thesis concerns toy models of static higher-order topological phases that are topologically characterized in terms of unitary operators. We find that a class of these systems called quadrupole topological insulators exhibit a wider range of topological phases than known previously. In the second half of this dissertation, we study reflection matrices of higher-order topological phases and show that they can exhibit the same topological features as Floquet systems. Our findings suggest a new route to experimental realizations of Floquet systems, the one that avoids noise-induced decoherence inevitable in many other experimental setups.

The term "topological insulator" (TI) represents a novel class of compounds which are insulating in the bulk, but simultaneously and unavoidably have a metallic surface. The reason for this is the non-trivial band topology, arising from particular band inversions and the spin-orbit interaction, of the bulk. These topologically protected metallic surface states are characterized by massless Dirac dispersion and locked helical spin polarization, leading to forbidden back-scattering with robustness against disorder. Based on the extraordinary features of the topological insulators an abundance of new phenomena and many exciting experiments have been proposed by theoreticians, but still await their experimental verification, not to mention their implementation into applications, e.g. the creation of Majorana fermions, advanced spintronics, or the realization of quantum computers. In this perspective, the 3D TIs Bi2Te3 and Bi2Se3 gained a lot of interest due to their relatively simple electronic band structure, having only a single Dirac cone at the surface. Furthermore, they exhibit an appreciable bulk band gap of up to ~ 0.3 eV, making room temperature applications feasible. Yet, the execution of these proposals remains an enormous experimental challenge. The main obstacle, which thus far hampered the electrical characterization of topological surface states via transport experiments, is the residual extrinsic conductivity arising from the presence of defects and impurities in their bulk, as well as the contamination of the surface due to exposure to air. This thesis is part of the actual effort in improving sample quality to achieve bulk-insulating Bi2Te3 films and study of their electrical properties under controlled conditions. Furthermore, appropriate capping materials preserving the electronic features under ambient atmosphere shall be identified to facilitate more sophisticated ex-situ experiments. Bi2Te3 thin films were fabricated by molecular beam epitaxy (MBE). It could be shown that, by optimizing the growth conditions, it is indeed possible to obtain consistently bulk-insulating and single-domain TI films. Hereby, the key factor is to supply the elements with a Te/Bi ratio of ~8, while achieving a full distillation of the Te, and the usage of substrates with negligible lattice mismatch. The optimal MBE conditions for Bi2Te3 were found in a two-step growth procedure at substrate temperatures of 220°C and 250°C, respectively, and a Bi flux rate of 1 Å/min. Subsequently, the structural characterization by high- and low-energy electron diffraction, photoelectron spectroscopy, and, in particular, the temperature-dependent conductivity measurements were entirely done inside the same ultra-high vacuum (UHV) system, ensuring a reliable record of the intrinsic properties of the topological surface states. Bi2Te3 films with thicknesses ranging from 10 to 50 quintuple layers (QL; 1QL~1 nm) were fabricated to examine, whether the conductivity is solely arising from the surface states. Angle resolved photoemission spectroscopy (ARPES) demonstrates that the chemical potential for all these samples is located well within the bulk band gap, and is only intersected by the topological surface states, displaying the characteristic linear dispersion. A metallic-like temperature dependency of the sheet resistance is observed from the in-situ transport experiments. Upon going from 10 to 50QL the sheet resistance displays a variation by a factor 1.3 at 14K and of 1.5 at room temperature, evidencing that the conductivity is indeed dominated by the surface. Low charge carrier concentrations in the range of 2–4*10^12 cm^−2 with high mobility values up to 4600 cm2/Vs could be achieved. Furthermore, the degradation effect of air exposure on the conductance of the Bi2Te3 films was quantified, emphasizing the necessity to protect the surface from ambient conditions. Since the films behave inert to pure oxygen, water/moisture is the most probable source of degeneration. Moreover, epitaxially grown elemental tellurium was identified as a suitable capping material preserving the properties of the intrinsically insulating Bi2Te3 films and protecting from alterations during air exposure, facilitating well-defined and reliable ex-situ experiments. These findings serve as an ideal platform for further investigations and open the way to prepare devices that can exploit the intrinsic features of the topological surface states. / Der Begriff "Topologischer Isolator" (TI) beschreibt eine neuartige Klasse von Verbindungen deren Inneres (engl. Bulk) isolierend ist, dieses Innere aber gleichzeitig und zwangsläufig eine metallisch leitende Oberfläche aufweist. Dies ist begründet in der nicht-trivialen Topologie dieser Materialien, welche durch eine spezielle Invertierung einzelner Bänder in der Bandstruktur und der Spin-Bahn-Kopplung im Materialinneren hervorgerufen ist. Diese topologisch geschützten, metallischen Oberflächenzustände sind gekennzeichnet durch eine masselose Dirac Dispersionsrelation und gekoppelte Helizität der Spinpolarisation, welche die Rückstreuung der Ladungsträger verbietet und somit zur Stabilisierung der Zustände gegenüber Störungen beiträgt. Auf Grundlage dieser außergewöhnlichen Merkmale haben Theoretiker eine Fülle neuer Phänomene und spannender Experimente vorhergesagt. Deren experimentelle Überprüfung steht jedoch noch aus, geschweige denn deren Umsetzung in Anwendungen, wie zum Beispiel die Erzeugung von Majorana Teilchen, fortgeschrittene Spintronik, oder die Realisierung von Quantencomputern. Aufgrund ihrer relativ einfachen Bandstruktur, welche nur einen Dirac-Kegel an der Oberfläche aufweist, haben die 3D TI Bi2Te3 und Bi2Se3 in den letzten Jahren großes Interesse erlangt. Weiterhin besitzen diese Materialien eine merkliche Bandlücke von bis zu ~0,3 eV, welche sogar Anwendungen bei Raumtemperatur ermöglichen könnten. Dennoch ist deren experimentelle Umsetzung nachwievor eine enorme Herausforderung. Das Haupthindernis, welches bis jetzt insbesondere die elektrische Charakterisierung the topologischen Oberflächenzustände behindert hat, ist die zusätzliche Leitfähigkeit des Materialinneren, welche durch Kristalldefekte und Beimischungen, sowie die Verunreinigung der Probenoberfläche durch Luftexposition bedingt wird. Die vorliegende Arbeit liefert einen Beitrag zu aktuellen den Anstrengungen in der Verbesserung der Probenqualität der TI um die Leitfähigkeit des Materialinneren zu unterdrücken, sowie die anschließende Untersuchung der elektrischen Eigenschaften unter kontrollierten Bedingungen durchzuführen. Weiterhin sollen geeignete Deckschichten identifiziert werden, welche die besonderen elektronischen Merkmale der TI nicht beeinflussen sowie diese gegen äußere Einflüsse schützen, und somit die Durchführung anspruchsvoller ex situ Experimente ermöglichen können. Die untersuchten Bi2Te3 Schichten wurden mittels Molekularstrahlepitaxie (MBE) hergestellt. Es konnte gezeigt werden, dass es allein durch Optimierung der Wachstumsbedingungen möglich ist Proben herzustellen, die gleichbleibend isolierende Eigenschaften des TI Inneren aufweisen und Eindomänen-Ausrichtung besitzen. Die zentralen Faktoren sind hierbei die Aufrechterhaltung eines Flussratenverhältnisses von Te/Bi ~8 der einzelnen Elemente, sowie die Wahl einer ausreichend hohen Substrattemperatur, um ein vollständiges Abdampfen (Destillation) des überschüssigen Tellur zu erreichen. Weiterhin müssen Substrate mit gut angepassten Gitterparametern verwendet werden, welches bei BaF2 (111) gegeben ist. Optimales MBE Wachstum konnte durch ein Zwei-Stufen Prozess bei Substrattemperaturen von 220°C und 250°C und einer Bi-Verdampfungsrate von 1 Å/min erreicht werden. Die nachfolgende Charakterisierung der strukturellen Eigenschaften, Photoelektronenspektroskopie, sowie temperaturabhängige Leitfähigkeitsmessungen wurden alle in einem zusammenhängenden Ultrahochvakuum-System durchgeführt. Auf diese Weise wird eine zuverlässige Erfassung der intrinsischen Eigenschaften der TI sichergestellt. Zur Überprüfung, ob die Leitfähigkeit der Proben tatsächlich nur durch die Oberflächenzustände hervorgerufen wird, wurden Filme mit Schichtdicken im Bereich von 10 bis 50 Quintupel-Lagen (QL; 1QL~ 1 nm) hergestellt und charakterisiert. Winkelaufgelöste Photoelektronenspektroskopie (ARPES) belegt, dass das chemische Potential (Fermi-Niveau) in allen Proben innerhalb der Bandlücke der Bandstruktur des Materialinneren liegt und nur von den topologisch geschützten Oberflächenzuständen gekreuzt wird, welche die charakteristische lineare Dirac Dispersionsrelation aufweisen. Die temperaturabhängigen Widerstandsmessungen zeigen ein metallisches Verhalten aller Proben. Bei der Variation der Schichtdicke von 10 zu 50QL wird eine Streuung des Flächenwiderstandes vom Faktor 1,3 bei 14K und 1,5 bei Raumtemperatur beobachtet. Dies beweist, dass die gemessene Leitfähigkeit vorrangig durch die topologisch geschützten Oberflächenzustände hervorgerufen wird. Eine geringe Oberflächenladungsträgerkonzentration im Bereich von 2–4*10^12 cm^−2 und hohe Mobilitätswerte von bis zu 4600 cm2/Vs wurden erreicht. Weiterhin wurden die negativen Auswirkungen auf die Eigenschaften der TI durch Luftexposition quantifiziert, welches die Notwendigkeit belegt, die Oberfläche der TI vor Umgebungseinflüssen zu schützen. Die Proben verhalten sich inert gegenüber reinem Sauerstoff, daher ist Wasser aus der Luftfeuchte höchstwahrscheinlich der Hauptgrund für die beobachtbare Verschlechterung. Darüber hinaus konnte epitaktisch gewachsenes Tellur als geeignete Deckschicht ausfindig gemacht werden, welches die Eigenschaften der Bi2Te3 Filme nicht beeinflusst, sowie gegen Veränderungen durch Luftexposition schützt. Die gewonnenen Erkenntnisse stellen eine ideale Grundlage für weiterführende Untersuchungen dar und ebnen den Weg zur Entwicklung von Bauelementen welche die spezifischen Besonderheiten der topologischen Oberflächenzustände.