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  • About
  • The Global ETD Search service is a free service for researchers to find electronic theses and dissertations. This service is provided by the Networked Digital Library of Theses and Dissertations.
    Our metadata is collected from universities around the world. If you manage a university/consortium/country archive and want to be added, details can be found on the NDLTD website.
1

Performance enhancement in column IV mobility, bandgap, and strain engineered MOSFETs

Onsongo, David Masara, Banerjee, Sanjay, January 2003 (has links)
Thesis (Ph. D.)--University of Texas at Austin, 2003. / Supervisor: Sanjay K. Banerjee. Vita. Includes bibliographical references. Also available from UMI.
2

Broadband modelling of high-frequency devices and circuits /

Paul, Douglas January 1900 (has links)
Thesis (M.App.Sc.) - Carleton University, 2006. / Includes bibliographical references (p. 103-107). Also available in electronic format on the Internet.
3

Total ionizing dose mitigation by means of reconfigurable FPGA computing /

Smith, Farouk. January 2007 (has links)
Dissertation (PhD)--University of Stellenbosch, 2007. / Bibliography. Also available via the Internet.
4

Enhanced defect generation in gate oxides of P-channel MOS transistors in the presence of water

Dasgupta, Aritra. January 2009 (has links)
Thesis (M. S. in Electrical Engineering)--Vanderbilt University, May 2009. / Title from title screen. Includes bibliographical references.
5

Compact modeling of silicon carbide (SiC) vertical junction field effect transistor (VJFET) in PSpice using Angelov model and PSpice simulation of analog circuit building blocks using SiC VJFET model

Purohit, Siddharth, January 2006 (has links)
Thesis (M.S.) -- Mississippi State University. Department of Electrical and Computer Engineering. / Title from title screen. Includes bibliographical references.
6

Influence of source/drain residual implant lattice damage traps on silicon carbide metal semiconductor field effect transistor drain I-V characteristics

Adjaye, John, January 2007 (has links)
Thesis (Ph.D.)--Mississippi State University. Department of Electrical and Computer Engineering. / Title from title screen. Includes bibliographical references.
7

Physics Of Conductivity Noise In Graphene

Pal, Atindra Nath 01 1900 (has links) (PDF)
This thesis describes the conductivity fluctuations or noise measurements in graphenebased field effect transistors. The main motivation was to study the effect of disorder on the electronic transport in graphene. In chapter 4, we report the noise measurements in graphene field effect (GraFET) transistors with varying layer numbers. We found that the density dependence of noise behaves oppositely for single and multilayer graphene. An analytical model has been proposed to understand the microscopic mechanism of noise in GraFETs, which reveals that noise is intimately connected to the band structure of graphene. Our results outline a simple portable method to separate the single layer devices from multi layered ones. Chapter 5 discusses the noise measurements in two systems with a bandgap: biased bilayer graphene and graphene nanoribbon. We show that noise is sensitive to the presence of a bandgap and becomes minimum when the bandgap is zero. At low temperature, mesoscopic graphene devices exhibit universal conductance fluctuations (UCF) arising due to quantum interference effect. In chapter 6, we have studied UCF in single layer graphene and show that it can be sensitive to the presence of various physical symmetries. We report that time reversal symmetry exists in graphene at low temperature and, for the first time, we observed enhanced UCF at lower carrier density where the scattering is dominated by the long-range Coulomb scattering. Chapter 7 presents the transport and noise measurements in single layer graphene in the quantum Hall regime. At ultra-low temperature several broken symmetry states appear in the lowest Landau level, which originate possibly due to strong electron-electron interactions. Our preliminary noise measurements in the quantum Hall regime reveal that the noise is sensitive to the bulk to edge transport and can be a powerful tool to investigate these new quantum states.

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