D. Tech. Chemical, Metallurgical and Materials Engineering / Aims to develop a thermoplastic matrix-based composite with a view to identifying the most suitable combinations of locally available natural fibres and matrices, which meet some basic requirements (e.g., fire and moisture resistance) for the structural and non-structural materials utilised in the building and construction industries.This general goal is divided into three distinct aims: 1. Examine the chemical surface modification of natural fibres (flax, hemp, pineapple and sisal) using water glass (WG). The study investigates the effect of WG treatment on the mechanical and thermooxidative properties of natural fibres. 2. To produce untreated and WG-treated short sisal/polypropylene (with or without maleic anhydride-grafted-polypropylene) compounds using the injection moulding process. The study also investigates the failure behaviour of the composites produced by the tensile-acoustic emission technique as well as the thermal and water absorption characteristics thereof. 3. To produce untreated and WG-treated nonwoven sisal/polypropylene (with or without maleated polypropylene) composites by using the compression moulding process. The study also investigated the fire resistance characteristics of composite materials.

The packing density of microelectronic devices has increased exponentially over the past four decades. Continuous enhancements in device performance and functionality have been achieved by the introduction of new materials and fabrication techniques. This thesis summarizes the thin film materials and metallization processes by chemical vapor deposition (CVD) developed during my graduate study with Professor Gordon at Harvard University. These materials and processes have the potential to build future generations of microelectronic devices with higher speeds and longer lifetimes. Manganese Silicate Diffusion Barrier: Highly conformal, amorphous and insulating manganese silicate \((MnSi_xO_y)\) layers are formed along the walls of trenches in interconnects by CVD using a manganese amidinate precursor vapor that reacts with the surfaces of the insulators. These \((MnSi_xO_y)\) layers are excellent barriers to diffusion of copper, oxygen and water. Manganese Capping Layer: A selective CVD manganese capping process strengthens the interface between copper and dielectric insulators to improve the electromigration reliability of the interconnects. High selectivity is achieved by deactivating the insulator surfaces using vapors containing reactive methylsilyl groups. Manganese at the Cu/insulator interface greatly increases the strength of adhesion between the copper and the insulator. Bottom-up Filling of Copper and Alloy in Narrow Features: Narrow trenches, with widths narrow than 30 nm and aspect ratios up to 9:1, can be filled with copper or copper-manganese alloy in a bottom-up fashion using a surfactant-catalyzed CVD process. A conformal manganese nitride \((Mn_4N)\) layer serves as a diffusion barrier and adhesion layer. Iodine atoms chemisorb on the \(Mn_4N\) layer and are then released to act as a catalytic surfactant on the surface of the growing copper layer to achieve void-free, bottom-up filling. Upon post-annealing, manganese in the alloy diffuses out from the copper and forms a self-aligned barrier in the surface of the insulator. Conformal Seed Layers for Plating Through-Silicon Vias: Through-silicon vias (TSV) will speed up interconnections between chips. Conformal, smooth and continuous seed layers in TSV holes with aspect ratios greater than 25:1 can be prepared using vapor deposition techniques. \(Mn_4N\) is deposited conformally on the silica surface by CVD to provide strong adhesion at Cu/insulator interface. Conformal copper or Cu-Mn alloy seed layers are then deposited by an iodine-catalyzed direct-liquid-injection (DLI) CVD process. / Chemistry and Chemical Biology

It is the future of the stratospheric ozone layer, which protects life at Earth’s surface from harmful ultraviolet (UV) radiation, that is the focus of the present work. Fundamental changes in the composition and structure of the stratosphere in response to anthropogenic climate forcing may lead to catastrophic ozone loss under current, and even reduced, stratospheric halogen loading. In particular, the evolution toward a colder, wetter stratosphere, threatens to enhance the heterogeneous conversion of inorganic halogen from its reservoir species to its catalytically active forms, and thus promote in situ ozone loss. Water vapor concentrations control the availability of reactive surface area, which facilitates heterogeneous chemistry. Furthermore, the rates of the key heterogeneous processes are tightly controlled by the ambient humidity. Thus, credible predictions of UV dosage require a quantitative understanding of both the sensitivity of these chemical mechanisms to water vapor concentrations, and an elucidation of the processes controlling stratospheric water vapor concentrations. Toward this end, we present a set of four case studies utilizing high resolution in situ data acquired aboard NASA aircraft during upper atmospheric research missions over the past two decades. 1) We examine the broad scale humidity structure of the upper troposphere and lower stratosphere from the midlatitudes to the tropics, focusing on cirrus formation and dehydration at the cold-point tropical tropopause. The data show evidence for frequent supersaturation in clear air, and sustained supersaturation in the presence of cirrus. These results challenge the strict thermal control of the tropical tropopause. 2) We investigate the likelihood of cirrus-initiated activation of chlorine in the midlatitude lower stratosphere. At midlatitudes the transition from conditions near saturation below the local tropopause to undersaturated air above greatly reduces the probability of heterogeneous activation and in situ ozone loss in this region. 3) We probe the details of heterogeneous processing in the wintertime Arctic vortex, and find that in situ measurements of OH provide incontrovertible evidence for the heterogeneous reaction of HOCl with HCl. This reaction is critical to sustaining catalytically active chlorine and prolonging ozone loss in the springtime vortex. 4) We revisit the topic of midlatitude ozone loss with an emphasis upon the response of ozone in this region to changes in the chemical composition and thermal structure of the lower stratosphere induced by anthropogenic climate change. Specifically, we show evidence for episodic moisture plumes in the overworld stratosphere generated by the rapid evaporation of ice injected into this region by deep convection, and find that these high water vapor plumes have the potential to alter the humidity of the lower stratosphere, and drastically increase the rate of heterogeneous chemistry and in situ ozone loss, given sufficient reactive surface. / Earth and Planetary Sciences

Stratospheric water vapor plays an important role in the Earth system, both through its role in stratospheric ozone destruction and as a greenhouse gas contributing to radiative forcing of the climate. Highly accurate water vapor measurements are critical to understanding how stratospheric water vapor concentrations will respond to a changing climate. However, the past disagreement among water vapor instruments on the order of 1 – 2 ppmv hinders understanding of the mechanisms which control stratospheric humidity, and the reliable detection of water vapor trends. In response to these issues, we present a new dual axis water vapor instrument that combines the heritage Harvard Lyman-\(\alpha\) hygrometer with the newly developed Harvard Herriott Hygrometer (HHH). The Lyman-\(\alpha\) instrument utilizes ultraviolet photo-fragment fluorescence detection, and its accuracy has been demonstrated though rigorous laboratory calibrations and in situ diagnostic procedures. HHH employs a tunable diode near-IR laser to measure water vapor via direct absorption in a Herriott cell; it demonstrated in-flight precision of 0.1 ppmv (1-sec) with accuracy of 5%±0.5 ppmv. We describe these two measurement techniques in detail along with our methodology for calibration and details of the measurement uncertainties. We also examine the recent flight comparison of the two instruments with several other in situ hygrometers during the 2011 MACPEX campaign, in which five independent instruments agreed to within 0.7 ppmv, a significant improvement over past comparisons. Water vapor measurements in combination with simultaneous in situ measurements of \(O_3\), CO, \(CO_2\), HDO, and HCl are also used to investigate transport in the Tropical Tropopause Layer (TTL). Data from the winter 2006 CR-AVE campaign and the summer 2007 TC4 campaign are analyzed in a one-dimensional mixing model to explore the seasonal importance of transport within the TTL via slow upward ascent, convective injection, and isentropic transport from the midlatitude stratosphere. The model shows transport from midlatitudes to be significant in summer and winter, affecting ozone concentrations and therefore the radiative balance of the TTL. It also shows significant convective influence up to 420 K potential temperature in both seasons, which appreciably increases the amount of water vapor above the tropopause. / Engineering and Applied Sciences

In microelectronics, the device size continues to shrink to improve the performance and functionality, which sets technical challenges for the integrated circuit (IC) fabrication. Novel materials and processing techniques are developed to maintain excellent device performances and structural reliability. Cobalt-based thin films possess numerous applications in microelectronics with the potential to enhance the device performance and reliability. This thesis explores the fabrication, characterization and application of cobalt-based thin films for microelectronics. Chemical vapor deposition (CVD) technique has been applied for depositing cobalt-based thin films, because CVD can produce high quality thin films with excellent conformality in complex 3D architectures required for future microelectronics. / Engineering and Applied Sciences

Existing tunable diode laser absorption spectroscopy (TDLAS) sensors for potassium (K) and for water vapor (H2O) and temperature were combined to enable simultaneous measurements in combustion and gasification processes. In-situ real-time detection of the above mentioned combustion parameters will improve the understanding of ash-formation during thermochemical conversion of biomass. Simultaneous measurements facilitate the experimental procedure and decrease the methodological uncertainty introduced by the heterogeneous nature of the pellets. The K sensor is based on direct absorption spectroscopy (DAS), whereas the H2O system employs wavelength modulation spectroscopy (WMS) together with two-line thermometry for temperature assessment. Two methods for combining the laser beams were evaluated, the first involving dichroic elements, the second using available fiber optic combiners. The latter method was considered advantageous. An existing LabVIEW program was modified to allow for simultaneous signal generation and data acquisition for both sensors. The sensors were then tested separately in a low pressure K cell and in ambient air. The combined sensor was applied to simultaneous measurements above various pelletized biofuels during combustion in a single pellet reactor (SPR). Significant difference in absolute concentration and time histories were observed between fuels, in particular for K and temperature. Significant K concentrations were only observed during the devolatilization phase. The combined sensor will be useful in fundamental combustion research.

An analysis that is based on the monitoring of dynamic features from in-situ sensors of an industrial PECVD tool is presented. Linear Discriminant Analysis is used to determine which features are the most sensitive to various changes in the tool condition. The concept of Confidence Values (CVs) is used to quantify statistical changes of these dynamic features as the condition of the tool changed. Two data sets were collected from a PECVD tool in the facilities of a well-known equipment supplier. Dynamic features coming from the RF plasma power and matching capacitors’ sensors are shown to be sensitive to various changes in the cleaning cycles for Si-N, Si-O₂, and TEOS depositions. Quantifying the statistical distributions of the sensitive sensor features during tool condition changes is important for determining which sensor features are necessary to monitor in order to predict the tool chamber health. Results show that these RF plasma sensors could be used to track changes inside the tool chamber. / text

This thesis is an investigation of the anode of a direct methanol fuel cell (DMFC) through numerical modeling and simulation. This model attempts to help better understand the two phase flow phenomena in the anode as well as to explain some of the many problems on the anode side of a DMFC and show how changing some of the anode side properties could alleviate these problems. This type of modeling is important for designing and optimizing the DMFC for specific applications like portable electronics. Understanding the losses within the DMFC like removable of carbon dioxide, conversion losses, and methanol crossover from the anode to the cathode will help the DMFC become more commercially viable. The model is based on two phase flow in porous media combined with equilibrium between phases in a porous media with contributions from a capillary pressure difference. The effect of the physical parameters of the fuel cell like the thickness, permeability, and contact angle as well as the operating conditions like the temperature and methanol feed concentration, have on the performance of the DMFC during operation will be investigated. This will show how to remove the gas phase from the anode while enabling methanol to reach the catalyst layer and minimizing methanol crossover. / text

Το μικροκρυσταλλικό υδρογονωμένο πυρίτιο (μc-Si:H) βρίσκει εφαρμογή ως ενδογενής ημιαγωγός σε φωτοβολταϊκές ιδιοσυσκευές λεπτών υμενίων πυριτίου απλής και ανάστροφης δομής (tandem). Η τυπική μέθοδος παρασκευής του υλικού είναι η χημική εναπόθεση ατμών ενισχυμένη με πλάσμα (Plasma Enhanced Chemical Vapor Deposition – PECVD) με χρήση χωρητικών εκκενώσεων υψηλής αραίωσης σιλανίου (SiH4) σε υδρογόνο (H2). Εξαιτίας της χαμηλής απορρόφησης στο ορατό φάσμα απαιτείται αρκετά μεγάλο πάχος της ενδογενούς στοιβάδας του μc-Si:H, ωστόσο με τα υπάρχοντα δεδομένα οι ρυθμοί εναπόθεσης είναι αρκετά χαμηλοί με αποτέλεσμα οι χρόνοι εναπόθεσης να είναι απαγορευτικοί για τη βιομηχανία. Έτσι γίνεται επιτακτική η ανάγκη για υψηλούς ρυθμούς εναπόθεσης (> 5 Å/s) ούτως ώστε να είναι εφικτή η παραγωγή φωτοβολταϊκών κελιών χαμηλού κόστους. Σκοπός της παρούσας εργασίας είναι η μελέτη εναλλακτικών τεχνικών ενίσχυσης του ρυθμού εναπόθεσης λεπτών υμενίων μc-Si:H όπως η χρήση πηγής πλάσματος υψηλής πυκνότητας ηλεκτρονίων (Hollow Cathode) και η χρήση δισιλανίου (Si2H6) ως επιπρόσθετο του τυπικού μίγματος SiH4/H2. Στο πρώτο μέρος παρουσιάζεται η κατασκευή δύο ηλεκτροδίων hollow cathode διαφορετικής γεωμετρίας και ο ηλεκτρικός χαρακτηρισμός τους σε εκκενώσεις Η2 με σκοπό τη βελτίωση της γεωμετρίας της πηγής και των συνθηκών στις οποίες επιτυγχάνεται υψηλή πυκνότητα ηλεκτρονίων στην εκκένωση. Επιπλέον παρουσιάζονται μετρήσεις ρυθμού εναπόθεσης λεπτών υμενίων με την πηγή hollow cathode διερευνώντας διαφορετικές παραμέτρους της διεργασίας και πραγματοποιείται σύγκριση με την προϋπάρχουσα πηγή χωρητικής σύζευξης. Αποδείχθηκε ότι με τη χρήση καθοδικών κοιλοτήτων μεγάλης διαμέτρου (20 mm) η πυκνότητα των ηλεκτρονίων αυξάνει σημαντικά και οι ρυθμοί εναπόθεσης είναι έως και τρεις φορές υψηλότεροι σε σχέση με την πηγή χωρητικής σύζευξης. Στο δεύτερο μέρος παρουσιάζεται η επίδραση της προσθήκης μικρής ποσότητας Si2H6 στο μίγμα SiH4/H2 στο ρυθμό εναπόθεσης και την κρυσταλλικότητα των λεπτών υμενίων πυριτίου, πραγματοποιείται βελτιστοποίηση της διεργασίας όσον αφορά την πίεση και συγκρίνεται η χρήση Si2H6 με την αύξηση της παροχής του μίγματος SiH4/H2. Η προσθήκη Si2H6 σε περιοχή πιέσεων 2-3 Torr αποδείχθηκε ευεργετική για το ρυθμό εναπόθεσης των υμενίων (έξι φορές αύξηση) λόγω ενίσχυσης της πυκνότητας ηλεκτρονίων και του ρυθμού διάσπασης του SiH4. Επίσης η προσθήκη Si2H6 οδηγεί σε υψηλότερη απόδοση εναπόθεσης συγκριτικά με την αύξηση της συνολικής παροχής του μίγματος SiH4/H2 ή της περιεκικότητας σε SiH4. / Microcrystalline hydrogenated silicon (μc-Si:H) is widely used as intrinsic layer in thin film solar cells of single or tandem structure. This material is most commonly produced via Plasma enhanced Chemical Vapor Deposition (PECVD) from highly diluted silane (SiH4) in hydrogen (H2). However, the rather low absorption coefficient of the intrinsic material in the visible spectrum imposes higher layer thickness in order to ensure high device efficiency. The key obstacle for the production of cost-effective solar cells is the relatively low growth rate of the intrinsic μc-Si:H and thus the research is focused on the increase of the deposition rate while maintaining the thin film quality. In this work we aim to study alternative techniques in order to enhance the μc-Si:H thin films growth rate such as the utilization of high electron density plasma source (hollow cathode) and the small disilane (Si2H6) addition to the SiH4/H2 gas mixture. In the first part is presented the construction of two novel hollow electrodes and their electrical characterization in H2 discharges aiming to investigate the conditions that ensure a high electron density in the discharge. Moreover, deposition rate measurements are presented for the hollow cathode source and compared to the already existing CCP source. It was proved that for the larger hollows (20mm diameter) the average electron density increased abruptly and the corresponding deposition rate was about 3 times higher comparatively to the CCP source. In the next part of this study is presented the effect of the small Si2H6 addition to the gas mixture to the silicon thin films growth rate and crystallinity, the process is optimized in terms of the total gas pressure and compared to the case of the SiH4/H2 total flow rate increase. The small Si2H6 addition in the narrow pressure region of 2-3 Torr proved beneficial for the film growth rate (six times increase) due to the sharp enhancement of the electron density and the SiH4 dissociation rate. The Si2H6 addition also resulted in much higher deposition efficiency as compared with the increase of the SiH4/H2 flow rate or the SiH4 molar fraction.

The structure and properties of chemical vapor deposited zinc sulfide (CVD ZnS) were assessed before and after heat treatments, involving different annealing and hot isostatic pressing (HIPing) profiles. Samples were characterized using optical microscopy, SEM, TEM, electron diffraction, polycrystalline and powder x-ray diffraction, x-ray chemical microanalysis, photoluminescence, ultraviolet through longwave infrared transmission, and mechanical testing. Before heat treatment, CVD ZnS consists of lamellar twinned structures in 10 to 100 nm layers aggregated into domains which compose grains typically 5 to 10 μm in diameter with an overall crystallographic texture on the {100} planes. The scattering behavior of CVD ZnS was investigated and described by a surface scattering model based on internal surface roughness and refractive index variations due to onedimensional stacking disorder. The two to five percent hexagonality measured by x-ray diffraction is believed to form due to oxygen impurities at the twin boundaries which cause nanostructural polytypism and result in differential refractive index and scattering. CVD ZnS variants in low temperature deposited red ZnS and sulfur precursor elemental ZnS are examined as well. Color in CVD ZnS is believed to be due to band edge position, probably due to oxygen content, and not directly related to the hydride absorption at 6 μm. After annealing or hot isostatic pressing above 850 °C for sufficient time, CVD ZnS recrystallizes and becomes strongly textured on the {111} planes. This recrystallization is required to remove stacking disorder, resulting in a structure with less than half a percent hexagonality and low visible scattering. The recrystallization is believed to proceed by diffusing the oxygen at the nano-twin boundaries back into the lattice, thus unpinning the boundaries and allowing them to move and grow into the tabular recrystallized morphology by polytype induced exaggerated grain growth. The presence of active metals like platinum, silver, copper, or nickel during hot isostatic pressing causes a reaction with sulfur and lowers the temperature required for recrystallization. The optical scattering model is consistent in describing standard CVD ZnS, elemental ZnS, and multispectral recrystallized ZnS as having successively lower birefringence at internal surfaces.