This work deals with the preparation of thin cerium oxide films on the Cu(110) single crystal. Physico-chemical properties of this system were studied by surface science techniques (XPS, UPS, ARUPS, LEED, LEEM and STM). The first part of the work concerns interaction of Cu(110) single crystal with oxygen. Condi- tions for formation of O(2x1) and Oc(6x2) oxygen reconstructions were found. Various methods of preparation of CeOx films were discussed. A novel method for continuous control of ceria stoichiometry from CeO2 to Ce2O3 through variation of oxygen vacancy concentration has been developed. Ceria facilitated oxygen spill-over was observed on copper substrate. It was found that a restructuring of copper substrate occurs at the copper-ceria interface with subsequent formation of Cu(13 13 1) facets, which support a Carpet-like ceria overlayer. Interaction of this system with platinum was studied. Finally, high temperature growth of CeOx films was studied and creation of ceria islands exposing the (110) plane was observed. 1
| Identifer | oai:union.ndltd.org:nusl.cz/oai:invenio.nusl.cz:352075 |
| Date | January 2016 |
| Creators | Aulická, Marie |
| Contributors | Veltruská, Kateřina, Nemšák, Slavomír, Švec, Martin |
| Source Sets | Czech ETDs |
| Language | Czech |
| Detected Language | English |
| Type | info:eu-repo/semantics/doctoralThesis |
| Rights | info:eu-repo/semantics/restrictedAccess |
Page generated in 0.1913 seconds