Interest in nanomaterials is motivated partly by their potential for sensor arrays to detect
different gases. Nanowires in particular are of interest because their high surface-to-volume
ratio promises the possibility of high sensitivity. However, because of their discrete
quasi-one-dimensional geometry, electrical integration of nanowires into photolithographically
defined devices and circuits is challenging and remains one of the obstacles to
their widespread use. In this thesis, a novel method for fabricating electrically integrated
zinc oxide nanobridge devices using carbonized photoresist is investigated. The conductivity
of carbonized photoresist is known and nanowire growth on carbonized photoresist
has recently been reported, suggesting the possibility of simultaneous use as a nucleation
layer and electrode. However, these reports did not characterize the contact between the
ZnO nanowires and carbonized photoresist. In this work, ZnO nanobridges are fabricated
between opposing carbonized photoresist electrodes and characterized both electrically
and with electron microscopy. Operation of nanobridge devices as bottom gate transistors,
UV sensors, and gas sensors is demonstrated. / Graduation date: 2010
| Identifer | oai:union.ndltd.org:ORGSU/oai:ir.library.oregonstate.edu:1957/14785 |
| Date | 03 March 2010 |
| Creators | Pelatt, Brian D. |
| Contributors | Conley, John F. Jr |
| Source Sets | Oregon State University |
| Language | en_US |
| Detected Language | English |
| Type | Thesis/Dissertation |
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