The ultra-short gate (LG < 20 nm) CMOS components (Complementary Metal-Oxide-Semiconductor) face thermal limitations due to significant local heating induced by phonon emission by hot carriers in active regions of reduced size. This phenomenon, called self-heating effect, is identified as one of the most critical for the continuous increase in the integration density of circuits. This is especially crucial in SOI technology (silicon on insulator), where the presence of the buried insulator hinders the dissipation of heat.At the nanoscale, the theoretical study of these heating phenomena, which cannot be led using the macroscopic models (heat diffusion coefficient), requires a detailed microscopic description of heat transfers that are locally non-equilibrium. It is therefore appropriate to model, not only the electron transport and the phonon generation, but also the phonon transport and the phonon-phonon and electron-phonon interactions. The formalism of the Boltzmann transport equation (BTE) is very suitable to study this problem. In fact, it is widely used for years to study the transport of charged particles in semiconductor components. This formalism is much less standard to study the transport of phonons. One of the problems of this work concerns the coupling of the phonon BTE with the electron transport.In this context, wse have developed an algorithm to calculate the transport of phonons by the direct solution of the phonon BTE. This algorithm of phonon transport was coupled with the electron transport simulated by the simulator "MONACO" based on a statistical (Monte Carlo) solution of the BTE. Finally, this new electro-thermal simulator was used to study the self-heating effects in nano-transistors. The main interest of this work is to provide an analysis of electro-thermal transport beyond a macroscopic approach (Fourier formalism for thermal transport and the drift-diffusion approach for electric current, respectively). Indeed, it provides access to the distributions of phonons in the device for each phonon mode. In particular, the simulator provides a better understanding of the hot electron effects at the hot spots and of the electron relaxation in the access.
| Identifer | oai:union.ndltd.org:CCSD/oai:tel.archives-ouvertes.fr:tel-00827633 |
| Date | 25 January 2013 |
| Creators | Nghiem Thi, Thu Trang |
| Publisher | Université Paris Sud - Paris XI |
| Source Sets | CCSD theses-EN-ligne, France |
| Language | English |
| Detected Language | English |
| Type | PhD thesis |
Page generated in 0.0024 seconds