Return to search

Lateral epitaxial growth of Ge films on Si via a vapor-liquid-solid mechanism

No description available.
Identiferoai:union.ndltd.org:mcgill.ca/oai:escholarship.mcgill.ca:rr172056j
Date January 2018
CreatorsWang, Weizhen
ContributorsNathaniel Quitoriano (Supervisor)
PublisherMcGill University
Source SetsMcGill University
Languagehttp://id.loc.gov/vocabulary/iso639-2/eng
Detected LanguageEnglish
TypeThesis
RightsAll items in eScholarship@McGill are protected by copyright with all rights reserved unless otherwise indicated.
RelationPid: 161020

Page generated in 0.0017 seconds