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GaN Based Nanomaterials Fabrication with Anodic Aluminium Oxide by MOCVD

A highly self-ordered hexagonal array of cylindrical pores has been fabricated by anodizing a thin film of Al on substrate and subsequent growth of GaN and InGaN in these nanoholes has been performed. This AAO template-based synthesis method provides a low cost process to fabricate GaN-based nanomaterials fabrication. / Singapore-MIT Alliance (SMA)

Identiferoai:union.ndltd.org:MIT/oai:dspace.mit.edu:1721.1/3664
Date01 1900
CreatorsWang, Yadong, Sander, Melissa, Peng, Chen, Chua, Soo-Jin, Fonstad, Clifton G. Jr.
Source SetsM.I.T. Theses and Dissertation
Languageen_US
Detected LanguageEnglish
TypeArticle
Format683180 bytes, application/pdf
RelationAdvanced Materials for Micro- and Nano-Systems (AMMNS);

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