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Use Bond-Orbital Models to Study Wurtzite Semiconductor Band Structures

A simple theoretical method for calculating electronic band structures of wurtzite materials based on the bond-orbital models is presented. This method can be used to study many problems such as band mixing and effects of external fields (electric field, magnetic field, and unaxial stress, etc.), since it can reproduce fairly accurate lowest conduction-band and top three valence-band structures. This method is very similar to LCAO method; however, it is much simpler and requires less computational effort than LCAO method.

Identiferoai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0708104-145935
Date08 July 2004
CreatorsWang, Wan-Tsang
ContributorsJih-Chen Chiang, Jiann-Shing Shyu, I-Min Jiang, Ikai Lo
PublisherNSYSU
Source SetsNSYSU Electronic Thesis and Dissertation Archive
LanguageCholon
Detected LanguageEnglish
Typetext
Formatapplication/pdf
Sourcehttp://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0708104-145935
Rightswithheld, Copyright information available at source archive

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