This document contains a proposal for the creation of a simulator that can accurately model the interaction of electromagnetic (EM) and semiconductor effects for modern wireless devices including nonlinear and/or active devices.
The proposed simulator couples the balanced semiconductor equations (charge, momentum, kinetic energy) with a FDTD full-wave Yee-based electromagnetic (EM) simulator. The resultant CAD tool is able to model the response of one semiconductor device to both small signal and DC bias based on the process parameters (material, charge distribution and doping) without any a-priori knowledge of the device performance characteristics, thus making it extremely useful in modeling and integrating novel devices in RF and Wireless topologies. As a proof of concept an n+--i--n+ diode will be simulated. In the future, more complicated structures, such as MODFETs, will be modeled as well.
| Identifer | oai:union.ndltd.org:GATECH/oai:smartech.gatech.edu:1853/14551 |
| Date | 10 April 2007 |
| Creators | McGarvey, Brian Scott |
| Publisher | Georgia Institute of Technology |
| Source Sets | Georgia Tech Electronic Thesis and Dissertation Archive |
| Detected Language | English |
| Type | Thesis |
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