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Electronic and material properties of MOS-gated Si/Si←1←-←xGe←x P-channel heterostructures

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1. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.263117

Identifer	oai:union.ndltd.org:bl.uk/oai:ethos.bl.uk:263117
Date	January 1997
Creators	Lander, Robert James Pascoe
Publisher	University of Warwick
Source Sets	Ethos UK
Detected Language	English
Type	Electronic Thesis or Dissertation