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Molecular beam epitaxy grown III-nitride materials for high-power and high-temperture applications : impact of nucleation kinetics on material and device structure quality

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1. http://hdl.handle.net/1853/16426
2. 674910

Identifer	oai:union.ndltd.org:GATECH/oai:smartech.gatech.edu:1853/16426
Date	08 1900
Creators	Namkoong, Gon
Publisher	Georgia Institute of Technology
Source Sets	Georgia Tech Electronic Thesis and Dissertation Archive
Detected Language	English
Type	Dissertation
Rights	Access restricted to authorized Georgia Tech users only.