Wetting of a substance has been widely investigated since it has many applications to many different fields. Wetting principles can be applied to better select cleans for front end of line (FEOL) and back end of line (BEOL) cleaning processes. These principles can also be used to help determine processes that best repel water from a semiconductor device. It is known that the value of the dielectric constant in an insulator increases when water is absorbed. These contact angle experiments will determine which processes can eliminate water absorption. Wetting is measured by the contact angle between a solid and a liquid. It is known that roughness plays a crucial role on the wetting of a substance. Different surface groups also affect the wetting of a surface. In this work, it was investigated how wetting was affected by different solid surfaces with different chemistries and different roughness. Four different materials were used: silicon; thermally grown silicon dioxide on silicon; chemically vapor deposited (CVD) silicon dioxide on silicon made from tetraethyl orthosilicate (TEOS); and organosilicate glass (OSG) on silicon. The contact angle of each of the samples was measured using a goniometer. The roughness of the samples was measured by atomic force microscopy (AFM). The chemistry of each of the samples were characterized by using X-ray photoelectron spectroscopy (XPS) and grazing angle total attenuated total reflection Fourier transform infrared spectroscopy (FTIR/GATR). Also, the contact angle was measured at the micro scale by using an environmental scanning electron microscope (ESEM).
| Identifer | oai:union.ndltd.org:unt.edu/info:ark/67531/metadc12161 |
| Date | 12 1900 |
| Creators | Martinez, Nelson |
| Contributors | Reidy, Richard F., Brostow, Witold, 1934-, Du, Jincheng, Srivilliputhur, Srinivasan G. |
| Publisher | University of North Texas |
| Source Sets | University of North Texas |
| Language | English |
| Detected Language | English |
| Type | Thesis or Dissertation |
| Format | Text |
| Rights | Public, Copyright, Martinez, Nelson, Copyright is held by the author, unless otherwise noted. All rights reserved. |
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