Wide bandgap semiconductors have entered into Naval radar use and will eventually replace vacuum tube and conventional solid-state amplifiers for all modern military radar and communications applications. Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) are on the leading edge of wide bandgap technology and have the performance characteristics to dominate in high power รข high bandwidth applications. The Defense Advanced Research Projects Agency (DARPA), Office of Naval Research (ONR) and Missile Defense Agency (MDA) are all sponsoring research projects to apply wide bandgap technology. This thesis studies the effects of changing the substrate material of an existing GaN HEMT from sapphire to diamond through the use of commercially available Silvaco software for modeling and simulation. The unparalleled thermal properties of diamond are expected to dramatically decrease device temperatures and increase component lifetimes and reliability.
| Identifer | oai:union.ndltd.org:nps.edu/oai:calhoun.nps.edu:10945/1810 |
| Date | 12 1900 |
| Creators | Salm, Roman Peter. |
| Contributors | Weatherford, Todd R., Parker, Andrew A., Naval Postgraduate School (U.S.)., Department of Electrical and Computer Engineering |
| Publisher | Monterey, California. Naval Postgraduate School |
| Source Sets | Naval Postgraduate School |
| Detected Language | English |
| Type | Thesis |
| Format | xvi, 53 p. ;, application/pdf |
| Rights | Approved for public release, distribution unlimited |
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