A research report submitted to the Faculty of Science, University of the Witwatersrand,
Johannesburg, in partial fulfilment of the requirements for the degree of Master of
Science / The role of intersite electron correlation effects and the possible occurrence of the
metal-insulator transition in carbon-ion implanted type IIa diamond samples have been
studied at very low temperatures, using four- and two-point probe contact electrical
conductivity measuring techniques. The measurements were extended to ruthenium
oxide thin films in the presence and absence of a constant magnetic field of B = 4.0 T
down to 100 mK, using a 3He-4He dilution refrigerator. The effect of the Coulomb gap
in the variable range hopping regime has been well studied by other workers. The results
tend to follow the Efros-Shklovskii behaviour with a trend towards the Mott T- 114 law
for diamond samples far removed from the metal insulator transition, on the insulating
side at low temperatures. / Andrew Chakane 2019
| Identifer | oai:union.ndltd.org:netd.ac.za/oai:union.ndltd.org:wits/oai:wiredspace.wits.ac.za:10539/26299 |
| Date | January 1992 |
| Creators | Tshepe, Tshakane Frans |
| Source Sets | South African National ETD Portal |
| Language | English |
| Detected Language | English |
| Type | Thesis |
| Format | application/pdf |
Page generated in 0.0028 seconds