On InGaAs/AlInAs heterostructures we made nanowires which were made by focus ion beam (FIB) and the width of nanowires making by FIB were 40nm¡B70nm¡B100nm and 200nm respectively. we studied electronic characterization of nanowires using Shubnikov-de Haas(SdH).In our research,by using SdH method there are no signal in our sample which processed by FIB,then we changed to process technology in our sample.For example: Increase thickness of the protection layer,size of change channel,etc.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0719106-215754 |
| Date | 19 July 2006 |
| Creators | Yu, Chien-Pang |
| Contributors | Ming-Kwei Lee, Jih-Chen Chiang, Ikai Lo |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0719106-215754 |
| Rights | unrestricted, Copyright information available at source archive |
Page generated in 0.0023 seconds