This thesis is divided into three main parts dealing with ion beam assisted deposition. In the first part there is a brief description of the IBAD chamber at Institute of Physical Engineering of BUT. There is also a detailed description of control of the IBAD apparatus during deposition. Next part deals with measuring of deposition rates of ion sputtering in order to refine deposition of thin layers. Last part deals with planned and already finished changes that should improve quality and speed of thin layers deposition. Changes include the option of covering the substrate holder, change of the entry flange, design of new insertion chamber with multifunctional substrate holder and the option to control the deposition by computer.
| Identifer | oai:union.ndltd.org:nusl.cz/oai:invenio.nusl.cz:228242 |
| Date | January 2008 |
| Creators | Urbánek, Ivan |
| Contributors | Nebojsa, Alois, Spousta, Jiří |
| Publisher | Vysoké učení technické v Brně. Fakulta strojního inženýrství |
| Source Sets | Czech ETDs |
| Language | Czech |
| Detected Language | English |
| Type | info:eu-repo/semantics/masterThesis |
| Rights | info:eu-repo/semantics/restrictedAccess |
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