Low cost, rapid and high thermal by IR heating, rapid cooling and high efficiency, there are RTP (Rapid Thermal Processing) properties. We can use RTP for annealing, diffusion, contacting, oxidation and others. Rapid temperature change and IR heating can be followed positive effects in the silicon substrate. This paper is focused on annealing by RTP. Wafers were p-type monocrystalline CZ silicon with different bulk minority carrier lifetime. Minority carrier lifetime was measured by MW-PCD (Microwave Photoconductance Decay) before and after thermal processing.
| Identifer | oai:union.ndltd.org:nusl.cz/oai:invenio.nusl.cz:218689 |
| Date | January 2010 |
| Creators | Frantík, Ondřej |
| Contributors | Hégr, Ondřej, Szendiuch, Ivan |
| Publisher | Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií |
| Source Sets | Czech ETDs |
| Language | Czech |
| Detected Language | English |
| Type | info:eu-repo/semantics/masterThesis |
| Rights | info:eu-repo/semantics/restrictedAccess |
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