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Microwave Propagation in Rectangular Waveguide Containing Semiconductor Subject to Transverse Magnetic Field

<p> A detailed theoretical analysis of the propagation constant
and the field components in rectangular waveguide completely filled
with a semiconductor subjected to an external transverse applied
magnetic field, has been carried out. A numerical solution of the
transcendental equation for the propagation constant has been obtained
for the n-type germanium samples with different conductivities and
magnetic fields. </p> <p> An experimental verification of this theoretical analysis has
been made with a 22.2 ohm-em, n-type germanium sample at 9.46 GHz.
The applied transverse magnetic field was varied from 0 to 10 Kilogauss.
Measurements of the reflection co efficients at the air-semiconductor
interface for different values of the applied magnetic field have been
made with a high precision microwave reflection bridge. The
experimental results agree well with the theoretical results. </p> / Thesis / Master of Engineering (MEngr)

Identiferoai:union.ndltd.org:mcmaster.ca/oai:macsphere.mcmaster.ca:11375/20006
Date04 1900
CreatorsRahman, Syed
ContributorsGunn, M. W., Electrical Engineering
Source SetsMcMaster University
LanguageEnglish
Detected LanguageEnglish
TypeThesis

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