Return to search

Silicon and Silicon Nitride Prepared by Ratio-frequency magnetron sputtering on Silicon and Glass substrates

Silicon and silicon nitride thin films were growth on Si and glass substrates at room temperature by ratio-frequency (r-f) magnetron sputtering.
The electrical characteristics of the silicon nitride films were characterized using I-V and C-V measurement under different growth condition, including r-f power, nitrogen partial pressure, and hydrogen partial pressure. Minimum current leakages for MIS structure as low as 2¡Ñ10 A/cm were obtained at 1 MV/cm electrical field with hysteresis voltage about 2V. The root-mean square surface roughness of the silicon nitride film is less then 1nm. In addition, silicon nitride capacitors with indium-tin-oxide as electrodes were fabricated.
Silicon thin films prepared by R.F. magnetron sputtering at room temperature are amorphous. The measurements on the variation of the photo-conductivity were used to characterize the characteristics of the Si film.

Identiferoai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0706107-144911
Date06 July 2007
CreatorsYang, Chi-Chang
ContributorsChao-Kuei Lee, Ju-Tah Tung, Ann-Kuo Chu, Ting-Chang Chang
PublisherNSYSU
Source SetsNSYSU Electronic Thesis and Dissertation Archive
LanguageCholon
Detected LanguageEnglish
Typetext
Formatapplication/pdf
Sourcehttp://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0706107-144911
Rightswithheld, Copyright information available at source archive

Page generated in 0.0022 seconds