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Characterization of Boron Nitride Thin Films on Silicon (100) Wafer.

Cubic boron nitride (cBN) thin films offer attractive mechanical and electrical properties. The synthesis of cBN films have been deposited using both physical and chemical vapor deposition methods, which generate internal residual, stresses that result in delamination of the film from substrates. Boron nitride films were deposited using electron beam evaporation without bias voltage and nitrogen bombardment (to reduce stresses) were characterize using FTIR, XRD, SEM, EDS, TEM, and AFM techniques. In addition, a pin-on-disk tribological test was used to measure coefficient of friction. Results indicated that samples deposited at 400°C contained higher cubic phase of BN compared to those films deposited at room temperature. A BN film containing cubic phase deposited at 400°C for 2 hours showed 0.1 friction coefficient.

Identiferoai:union.ndltd.org:unt.edu/info:ark/67531/metadc3942
Date08 1900
CreatorsMaranon, Walter
ContributorsNasrazadani, Seifollah, Wang, Shuping, Plummer, Mitty C.
PublisherUniversity of North Texas
Source SetsUniversity of North Texas
LanguageEnglish
Detected LanguageEnglish
TypeThesis or Dissertation
FormatText
RightsPublic, Copyright, Maranon, Walter, Copyright is held by the author, unless otherwise noted. All rights reserved.

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