The current transport mechanisms in metal-oxide-semiconductor (MOS) capacitors have been studied. The devices used in this study have characterized by current-voltage analyses. Physical parameter extractions and computer generated fit methods have been applied to experimental data. Two devices have been investigated: A relatively thick oxide (125 nm) and an ultra-thin oxide (3 nm) MOS structures. The voltage and temperature dependence of these devices have been explained by using present current transport models.
Identifer | oai:union.ndltd.org:METU/oai:etd.lib.metu.edu.tr:http://etd.lib.metu.edu.tr/upload/12605489/index.pdf |
Date | 01 October 2004 |
Creators | Arikan, Mustafa |
Contributors | Turan, Rasit |
Publisher | METU |
Source Sets | Middle East Technical Univ. |
Language | English |
Detected Language | English |
Type | M.S. Thesis |
Format | text/pdf |
Rights | To liberate the content for public access |
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