In this study, the reactive rf magnetron sputtering was used to deposit zinc oxide (ZnO) thin films on Si substrate. The optimal sputtering parameters for film as luminescence application were found to be oxygen concentration (O2/O2+Ar) of 21%, RF power of 100W, substrate temperature of 500¢XC and sputtering pressure of 5 mtorr. Beside, the thermal treatment procedure was carried out to improve the luminescence characteristics of ZnO thin films.
The physical characteristics of ZnO thin films deposited on Si substrate with different sputtering parameters were obtained by the analyses of XRD and SEM. The optical properties of ZnO thin films were discussed also. Ultraviolet (UV) visible spectrometer and photoluminescence spectrometer were used to measure the visible transmission and photoluminescence characteristics (PL), respectively.
According to the experimental results, it is found that under optimal sputtering parameters, the emitted UV light intensity will be increased as the FWHM in x-ray diffraction is decreased, i.e. the grain size is larger. In addition, after post-deposition annealing at 800¢J, the strongest UV emission intensity was obtained in the nitrogen ambient and the strongest visible (green) emission intensity was obtained in the oxygen ambient.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0707104-164620 |
| Date | 07 July 2004 |
| Creators | Kuo, Yi-Nan |
| Contributors | Maw-Shung Lee, Mau-Phon Houng, Ying-Chung Chen, Yu-Zen Tsai, Sheng-Yuan Chu |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0707104-164620 |
| Rights | withheld, Copyright information available at source archive |
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