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Growth and characterization of FeSi nanowires by chemical vapor deposition for gas sensing applications

>Magister Scientiae - MSc / FeSi nanowires were synthesized via a chemical vapor deposition method. Anhydrous FeCl3 powder in this case served as the Fe source and was evaporated at a temperature of 1100oC to interact with silicon substrates which served as the silicon source. The nanowires followed the vapor solid (VS) growth mechanism, which does not require the use of a metal catalyst; the native silicon oxide layer on the silicon substrates played the role of the catalyst in the growth of these nanostructures. A second growth mechanism, involving the use of a metal catalyst to assist in the growth of the nanowires was attempted by depositing a thin film of gold on silicon substrates. The reaction yielded SiOx nanowires; these results are discussed in detail in Chapter 5. All the nanostructures were characterized by X-ray diffraction (XRD), Transmission Electron Microscopy (TEM), Scanning Electron Microscopy (SEM), Photoluminescence Spectroscopy (PL), Raman Spectroscopy and Fourier Transform Infrared Spectroscopy (FTIR).

Identiferoai:union.ndltd.org:netd.ac.za/oai:union.ndltd.org:uwc/oai:etd.uwc.ac.za:11394/4239
Date January 2014
CreatorsThabethe, Sibongiseni Stanley
ContributorsMwakikunga, B.W.
PublisherUniversity of the Western Cape
Source SetsSouth African National ETD Portal
LanguageEnglish
Detected LanguageEnglish
TypeThesis
RightsUniversity of the Western Cape

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