In this thesis, we grew the LiAlO2 single crystals was grown by Czochralski method and determined the best polishing process.
The raw materials of growing LiAlO2 are Li2CO3 and Al2O3. After mixing these two powders, they are put into an Ir crucible and heat it up with RF generator in N2 environment. We tried to use the optimized rotation rate and pull rate in the growth process to ensure the shape of the crystal to be uniform and having the good quality.
Before the epitaxy of GaN, the substrate must be polished to improve GaN quality. The (100) surface of LiAlO2 was polished by using various particle size of SiC sandpapers, de-ion water mixed with Al2O3 powders, and colloidal SiO2 suspension. Finally, the LiAlO2 specimen is soaked into an acid solution for etching at room temperature to obtain a smooth surface. The results show a roughness below 1.0 nm rms.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0614106-145217 |
| Date | 14 June 2006 |
| Creators | Huang, Sin-jie |
| Contributors | Ming-Chi Chou, none, none |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0614106-145217 |
| Rights | unrestricted, Copyright information available at source archive |
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