This work deals with problems aging of unipolar transistors. In theoretical parts are described the mechanisms which causing aging unipolar transistors and way leading to the restriction the change of parameters in time. The measurement and data evaluation was built on theoretical knowledge. The model of aging FET is a result of this works; it is creating extraction of data from measured data. Finally, the degradation constants are evaluation from this data. This FET aging model is easy to use in simulators of electronics circuits including aging simulations (e.g. ELDO).
| Identifer | oai:union.ndltd.org:nusl.cz/oai:invenio.nusl.cz:217242 |
| Date | January 2008 |
| Creators | Novosád, Jiří |
| Contributors | Legát, Pavel, Semiconductor, Aleš Litschmann, ON |
| Publisher | Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií |
| Source Sets | Czech ETDs |
| Language | Czech |
| Detected Language | English |
| Type | info:eu-repo/semantics/masterThesis |
| Rights | info:eu-repo/semantics/restrictedAccess |
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