The total ionizing dose (TID) response of HfO2-SiO2/SiGe pMOS FinFETs under different irradiation biases has been evaluated. Negative bias irradiation leads to the worst-case degradation. We attribute this result to an increase in density of additional radiation-induced holes that become trapped in the HfO2 under negative bias, and additional electron trapping under positive bias in the HfO2, as compared with the 0 V irradiation case. When devices are exposed to negative bias-temperature stress, we find similar values of Ea for oxide-trap charge buildup, and a reduced Ea for interface-trap buildup, for Si0.55Ge0.45 pMOSFETs with high-k gate stacks, compared to control Si devices with SiO2 gate dielectrics. The low-frequency 1/f noise of these devices was also investigated. The magnitude of noise is unaffected by negative-bias-temperature stress (NBTS) for temperatures below ~ 250 K, but increases significantly at higher temperatures. The noise is described well by the Dutta-Horn model before and after NBTS. The noise is attributed to oxygen-vacancy and hydrogen-related defects in the SiO2 and HfO2 (especially at the higher measuring temperatures) and/or hydrogen-dopant interactions in the SiGe layer of the device (especially for lower measuring temperature).
| Identifer | oai:union.ndltd.org:VANDERBILT/oai:VANDERBILTETD:etd-07212016-224032 |
| Date | 15 August 2016 |
| Creators | Duan, Guoxing Duan |
| Contributors | Daniel M. Fleetwood, Ronald D. Schrimpf, Robert A. Reed, Sokrates T. Pantelides, Enxia Zhang |
| Publisher | VANDERBILT |
| Source Sets | Vanderbilt University Theses |
| Language | English |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.library.vanderbilt.edu/available/etd-07212016-224032/ |
| Rights | restricted, I hereby certify that, if appropriate, I have obtained and attached hereto a written permission statement from the owner(s) of each third party copyrighted matter to be included in my thesis, dissertation, or project report, allowing distribution as specified below. I certify that the version I submitted is the same as that approved by my advisory committee. I hereby grant to Vanderbilt University or its agents the non-exclusive license to archive and make accessible, under the conditions specified below, my thesis, dissertation, or project report in whole or in part in all forms of media, now or hereafter known. I retain all other ownership rights to the copyright of the thesis, dissertation or project report. I also retain the right to use in future works (such as articles or books) all or part of this thesis, dissertation, or project report. |
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