Techniques used to model a field-effect transistor's equivalent circuit parameters are investigated and applied to an on-wafer AlGaN/GaN HFET using high-frequency S-parameters. Analysis of a THRU line allowed substrate permittivity characterization, improving parasitic capacitance estimation. Drain-source output admittance dispersion was observed in the measured devices. This dispersion phenomena was attributed to parallel conduction and was primarily present for low drain-source bias. Dispersion complicated parameter calculation and required modification of commonly used model extraction techniques. Effective mobility was also estimated by only using information contained in the S-parameter measurements. Small-signal parameter temperature dependence was also investigated to determine each parameter's associated temperature coefficient.
| Identifer | oai:union.ndltd.org:NCSU/oai:NCSU:etd-08252008-091940 |
| Date | 18 September 2008 |
| Creators | Morgensen, Michael |
| Contributors | Mark Johnson, Kevin Gard, Doug Barlage |
| Publisher | NCSU |
| Source Sets | North Carolina State University |
| Language | English |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://www.lib.ncsu.edu/theses/available/etd-08252008-091940/ |
| Rights | unrestricted, I hereby certify that, if appropriate, I have obtained and attached hereto a written permission statement from the owner(s) of each third party copyrighted matter to be included in my thesis, dis sertation, or project report, allowing distribution as specified below. I certify that the version I submitted is the same as that approved by my advisory committee. I hereby grant to NC State University or its agents the non-exclusive license to archive and make accessible, under the conditions specified below, my thesis, dissertation, or project report in whole or in part in all forms of media, now or hereafter known. I retain all other ownership rights to the copyright of the thesis, dissertation or project report. I also retain the right to use in future works (such as articles or books) all or part of this thesis, dissertation, or project report. |
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