Doctor of Philosophy / Department of Chemistry / Viktor Chikan / Doping quantum dots to increase conductivity is a crucial step towards being able to
fabricate a new generation of electronic devices built on the “bottom-up” platform that are
smaller and more efficient than currently available. Indium, tin, and gallium have been used to
dope CdSe in both the bulk and thin film regimes and introduce n-type electron donation to the
conduction band. CdSe quantum dots have been successfully doped with indium, tin, and
gallium using the Li4[Cd10Se4(SPh16)] single source precursor combined with metal chloride
compounds. Doping CdSe quantum dots is shown to effect particle growth dynamics in the
“heterogeneous growth regime.” Doping with indium, tin, and gallium introduce donor levels
280, 100, and 50 meV below the conduction band minimum, respectively. Thin films of indium
and tin doped quantum dots show improved conductivity over films of undoped quantum dots.
Transient Absorption spectroscopy indicates that indium doping introduces a new electron
energy level in the conduction band that results in a 70 meV blue shift in the 1Se absorption
bleach position. Novel characterization methods such as in-situ fluorescence growth monitoring,
single quantum dot EDS acquisition, static and time-resolved temperature dependant
fluorescence spectroscopy were developed in the course of this work as well. These results show
that doping CdSe quantum dots with indium, tin, and gallium has not only been successful but
has introduced new electronic properties to the quantum dots that make them superior to
traditional CdSe quantum dots.
| Identifer | oai:union.ndltd.org:KSU/oai:krex.k-state.edu:2097/10745 |
| Date | January 1900 |
| Creators | Tuinenga, Christopher J. |
| Publisher | Kansas State University |
| Source Sets | K-State Research Exchange |
| Language | en_US |
| Detected Language | English |
| Type | Dissertation |
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