Scope and contents: The static and dynamic electrical characteristics of silicon n-channel MOS FETs are studied down to cryogenic temperatures. Particular emphasis is directed towards the effect of interface states on the temperature dependence of both the pinch-off voltage and 1/f noise. / No abstract included. / Thesis / Master of Engineering (MEngr)
| Identifer | oai:union.ndltd.org:mcmaster.ca/oai:macsphere.mcmaster.ca:11375/17433 |
| Date | 05 1900 |
| Creators | Cizmar , Edward S. |
| Contributors | Chisholm, S. H., Electrical Engineering |
| Source Sets | McMaster University |
| Language | English |
| Detected Language | English |
| Type | Thesis |
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