In this work, we demonstrate the mechanism for etching exfoliated graphene on SiO2 and other technological important substrates (Si, SiC and ITO), using low-energy electron sources. Our mechanism is based on helium ion sputtering and vacancy formation. Helium ions instead of incident electrons cause the defects that oxygen reacts with and etches graphene. We found that etching does not occur on low-resistivity Si and ITO. Etching occurs on higher resistivity Si and SiC, although much less than on SiO2. In addition, we studied the degradation mechanism of MoS2 under ambient conditions using as-grown and preheated mono- and thicker-layered MoS2 films. Thicker-layered MoS2 do not exhibit the growth of dendrites that is characteristic of monolayer degradation. Dendrites are observed to stop at the monolayer-bilayer boundary. Raman and photoluminescence spectra of the aged bilayer and thicker-layered films are comparable to those of as-grown films. We found that greater stability of bilayers and thicker layers supports a previously reported mechanism for monolayer degradation involving Förster resonance energy transfer. As a result, straightforward and scalable 2D materials integration, or air stable heterostructure device fabrication may be easily achieved. Our proposed mechanisms for etching graphene and ambient degradation of MoS2 could catalyze research on realizing new devices that are more efficient, stable, and reliable for practical applications.
| Identifer | oai:union.ndltd.org:unt.edu/info:ark/67531/metadc1833575 |
| Date | 08 1900 |
| Creators | Femi Oyetoro, John Dideoluwa |
| Contributors | Pérez, José M., Verbeck, Guido F., Weathers, Duncan, Philipose, Usha, Lin, Yuankun |
| Publisher | University of North Texas |
| Source Sets | University of North Texas |
| Language | English |
| Detected Language | English |
| Type | Thesis or Dissertation |
| Format | xx, 158 pages : illustrations (chiefly color), Text |
| Rights | Public, Femi Oyetoro, John Dideoluwa, Copyright, Copyright is held by the author, unless otherwise noted. All rights Reserved. |
Page generated in 0.0016 seconds