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Transport Studies of Two-Dimensional Electron Gas in AlGaN/GaN Quantum Well at Low Temperature and High Magnetic Field

We have studied the electronic properties of AlxGa1-xN/GaN heterostructures by using Shubnikov¡Vde Haas(SdH) measurement. Two SdH oscillations were detected on the samples of x=0.35 and 0.31, due to the population of the first two subbands with the energy separations of 128 and 109 meV, respectively. For the sample of x=0.25, two SdH oscillations beat each other, probably due to a finite zero-field spin splitting. The spin-splitting energy is equal to 9.0 meV. The samples also showed a persistent photoconductivity effect after illuminating by blue light-emitting diode. For the part of experiment , we installed a "Regulator" on low temperature and high magnetic field system, in order to control the temperature of sample from 0.3K to 10K accurately. For the convenience of
SdH measurements at different tempertures.

Identiferoai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0811103-121707
Date11 August 2003
CreatorsYao, Wen-Jiaw
ContributorsIkai Lo, none, none
PublisherNSYSU
Source SetsNSYSU Electronic Thesis and Dissertation Archive
LanguageCholon
Detected LanguageEnglish
Typetext
Formatapplication/pdf
Sourcehttp://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0811103-121707
Rightsunrestricted, Copyright information available at source archive

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