Silicon-based power devices have dominated power electronics applications over the last decades. Research and development in microelectronics have pushed the performance of power devices to face some fundamental limitations of silicon material. Wide band-gap semiconductors, such as silicon carbide, offer a solution to the pressing energy efficiency performance requirements of power electronic systems. Silicon carbide power devices can operate at higher temperatures, higher frequencies, and generate less power losses as compared to traditional silicon-based technologies. The use of wide band-gap transistors, however, is not the only way to increase the efficiency of the converters. Special DC to AC topologies, named soft switching converters, can be adopted as well in order to reduce the switching losses of transistors. The development of DC to AC power converters for applications requiring high efficiency is presented in this thesis. Silicon and silicon carbide based inverters, as well as soft switching inverters, have been analyzed and fabricated for performance comparison.
| Identifer | oai:union.ndltd.org:unibo.it/oai:amsdottorato.cib.unibo.it:7292 |
| Date | January 1900 |
| Creators | Rizzoli, Gabriele <1987> |
| Contributors | Zarri, Luca |
| Publisher | Alma Mater Studiorum - Università di Bologna |
| Source Sets | Università di Bologna |
| Language | English |
| Detected Language | English |
| Type | Doctoral Thesis, PeerReviewed |
| Format | application/pdf |
| Rights | info:eu-repo/semantics/embargoedAccess |
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