Development of ferroelectric thin films has been a subject of intensive investigation in recent years due to their promise in next· generation electronic devices. This report encompasses an· initial investigation into the pulsed laser deposition of thin films of bismuth ferrite-lead titanate (l-x)BiFe03-xPbTi03 (BFPT) on platinized silicon (Pt/Si) substrates. The work presented lays down optimised processing conditions for the preparation of BFPT thin films on Pt/Si substrates and presents an understanding of structure-property relationships of this material system thereby providing a firm platform to go forward and exploit this material in various thin film applications, particularly those requiring large remanent polarizations. The growth conditions were optimized by changing a range of process .parameters such as background oxygen pressure, substrate temperature and target to substrate distance which have a critical influence on the film structure and properties. The film structure was studied using X-ray diffraction and scanning electron microscopy. The ferroelectric properties have been presented in terms of typical polarization-field P-E hysteresis behaviour, in conjunction with leakage current measurements and impedance spectroscopy. Investigation into the electrical properties indicates a large increase in the remanent polarization close to the morphotropic phase boundary, making these compositions very attractive for commercial thin film applications e.g. ferroelectric memories.
| Identifer | oai:union.ndltd.org:bl.uk/oai:ethos.bl.uk:485633 |
| Date | January 2008 |
| Creators | Khan, Mikael Ali |
| Publisher | University of Leeds |
| Source Sets | Ethos UK |
| Detected Language | English |
| Type | Electronic Thesis or Dissertation |
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