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Spin injection from magnetic thin films into InGaAs quantum wells

The injection of spin polarised electrons is a fundamental challenge in the emergent field of spin electronics and is a prerequisite for the readout and initialisation for a spin qubit. This work is an investigation into spin injection from magnetic thin film contacts into (100) GaAs/InGaAs quantum wells as a function of energy, magnetic field, applied bias and temperature. The spin injection efficiency is derived from optical polarisation measurements in the oblique Hanle geometry. The Heusler alloy Co<sub>2</sub>MnGa is investigated as a potential spin injector and is compared directly with Fe on the same III-V device substrate. <i>Ab-initio</i> methods are used to investigate the spin polarised electronic band structure of some of these half-metallic alloys – in particular Co<sub>2</sub> TiSn.

Identiferoai:union.ndltd.org:bl.uk/oai:ethos.bl.uk:603996
Date January 2006
CreatorsHickey, M. C.
PublisherUniversity of Cambridge
Source SetsEthos UK
Detected LanguageEnglish
TypeElectronic Thesis or Dissertation

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