An Integrated Reliability Methodology (IRM) is presented that encompasses the changes that technology growth has brought with it and includes several new device degradation models. Each model is based on a physics of failure approach and includes on the effects of temperature. At all stages the models are verified experimentally on modern deep sub-micron devices. The research provides the foundations of a tool which gives the user the opportunity to make appropriate trade-offs between performance and reliability, and that can be implemented in the early stages of product development.
| Identifer | oai:union.ndltd.org:bl.uk/oai:ethos.bl.uk:432598 |
| Date | January 2007 |
| Creators | Owens, Gethin Lloyd |
| Publisher | Durham University |
| Source Sets | Ethos UK |
| Detected Language | English |
| Type | Electronic Thesis or Dissertation |
| Source | http://etheses.dur.ac.uk/2695/ |
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