In this work the analysis of hot carrier generation and injection in insulated-gate field effect transistors (IGFETs) is carried out with the aid of offset gate transistors. Several sets of transistors with systematically incremented gate offsets were produced for this investigation. The inclusion of photolithographically and angled-implant defined LDD (lightly doped drain) regions was also attempted, but no consistent calibration technique was found for the former and fabrication problems made the latter impractical. The charge pumping technique and the gated diode current method were employed in the evaluation of the generation of interface states and fixed charges. An adapted double-pulse charge pumping method was used to assess the energy distribution of interface states across the forbidden zone. The use of offset gate transistors made it possible to identify hot electron and hot hole degradation separately under different biasing conditions. Additionally, it suggested a clearer interpretation of the possible mechanisms involved in the degradation process.
| Identifer | oai:union.ndltd.org:bl.uk/oai:ethos.bl.uk:659935 |
| Date | January 1991 |
| Creators | Neves, Hercules Pereira |
| Publisher | University of Edinburgh |
| Source Sets | Ethos UK |
| Detected Language | English |
| Type | Electronic Thesis or Dissertation |
| Source | http://hdl.handle.net/1842/15499 |
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