This thesis optimizes the vacuum, vapour-phase self-assembly of n-octyl phosphonic acid monolayer. This monolayer is chemisorbed to the aluminium oxide (AIOx) and together they form an ultra-thin gate dielectric in organic thin-film transistors based on pentacene. The electrical measurements of the transistors and the corresponding metal-insulator-metal structures were combined with the characterization of n-octylphosphonic acid monolayers using the atomic force microscopy, water contact angle measurement and Fourier transform infrared spectroscopy. The results show that the properties of the organic monolayer depend on its evaporation rate, growth temperature and the post-growth annealing and affect the performance of the as-fabricated transistors as well as the transistor bias-induced instability.
| Identifer | oai:union.ndltd.org:bl.uk/oai:ethos.bl.uk:605940 |
| Date | January 2014 |
| Creators | Gupta, Swati |
| Publisher | University of Strathclyde |
| Source Sets | Ethos UK |
| Detected Language | English |
| Type | Electronic Thesis or Dissertation |
| Source | http://oleg.lib.strath.ac.uk:80/R/?func=dbin-jump-full&object_id=23098 |
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