This thesis addresses the advantages and challenges of strained silicon/silicon germanium (Si/SiGe) metal oxide on semiconductor field effect transistors (MOSFETs) from the mixed-signal perspective using electrical characterisation. It is divided into three main sections. The first section addresses the compatibility of strain engineering with other performance boosters like high k/metal gate stacks. The mixed-signal performance of strained SiGe pMOSFETs with hafnium silicate/titanium silicon-nitride (HfSiOx/TiSiN) gate stacks has beer using MOSFET electrical characterisation techniques. The strain induced performance enhancements usually reported at long gate lengths are shown to be reproducible at short gate lengths with some caveats. These caveats are that the challenges of effective channel length mismatch from strain-suppressed boron diffusion and source-drain parasitic resistances from unoptimized silicidation of SiGe are addressed. It is demonstrated that the enhancement in the open load voltage gain (self gain) of the SiGe devices compared with the Si control increases as the gate length is reduced. This is due to the lower lateral diffusion of the boron junction implants in compressively strained SiGe inducing better electrostatic integrity.
| Identifer | oai:union.ndltd.org:bl.uk/oai:ethos.bl.uk:500888 |
| Date | January 2008 |
| Creators | Alatise, Olayiwola Muktahir |
| Publisher | University of Newcastle Upon Tyne |
| Source Sets | Ethos UK |
| Detected Language | English |
| Type | Electronic Thesis or Dissertation |
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