InN have individual property of electrnic and surface, our research is focused on
the surface property. In this article, The surface property was studied by Auger
Electron Spectroscopy (AES), Low Energy Electron Diffraction(LEED), Scanning
Electron Microscope(SEM), and Scanning Tunneling Microscopy(STM).
The method in this article for cleaning surface of InN are wet etching by HCl,
Atomic Hydrogen Cleaning(AHC), and annealing. Wet etching by HCl was proceeding
in air, and a lot of junk would be adsorbed in the surface of InN when it
was taken from HCl to vacuum. Though wet etching was a simple method,
it could not be a best method to clean surface of InN. AHC were a relative
clean method in this article. Carbon and oxygen colud be removed effectively
by AHC.The filament of AHC was heating the surface of InN when AHC was
running, so the surface was annealing at that moment. After cleaning by AHC,
LEED spot and AES signal were improved.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0902108-163838 |
| Date | 02 September 2008 |
| Creators | Wu, Tsung-Hsuan |
| Contributors | Quark Yung-Sung Chen, Ker-Jan Song, Chien-Cheng Kuo, Li-Wei Tu |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0902108-163838 |
| Rights | unrestricted, Copyright information available at source archive |
Page generated in 0.0017 seconds