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Magneto-transport study of Fe-doped AlxGa1-xN/GaN with different Aluminum content grown by MOVPE

In this thesis, we study the magnetro-transport properties of Fe-doped AlxGa1-xN/GaN heterostructure with different Al content by Shubnikov-de Haas measurements. On the samples KTH640(x=0.294)¡BKTH643(x=0.344)¡BKTH642(x=0.390)¡BKTH644 (x=0.397), we find that the electron have occupied the lowest two subbands, and the energy separation for each sample before illumination is 98 meV¡B107 meV¡B111 meV¡B119 meV. On the samples KTH641(x= 0.216)¡BKTH640(x= 0.294)¡BKTH642(x= 0.390)¡BKTH644(x= 0.394), we observe the electrons have spin splitting phenomenon, and the highest spin splitting energy separation¡¦s value in our experiments is 10.6 meV. For all six samples have persistent photoconductivity effect¡¦s behavior after illumination.

Identiferoai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0703109-150149
Date03 July 2009
CreatorsJhuang, Shin-Hong
ContributorsIkai Lo, Ming-Chi Chou, Jih-Chen Chiang
PublisherNSYSU
Source SetsNSYSU Electronic Thesis and Dissertation Archive
LanguageCholon
Detected LanguageEnglish
Typetext
Formatapplication/pdf
Sourcehttp://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0703109-150149
Rightswithheld, Copyright information available at source archive

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