We have studied the electronic properties of AlxGa1-xN/GaN heterostructures by using Shubnikov¡Vde Haas(SdH) measurement. Two SdH oscillations were detected on the sample of x=0.31, due to the population of the first two subbands with the energy separations of 94.2 meV. For the samples of x=0.22 and x=0.23, two SdH oscillations beat each other, probably due to a finite zero-field spin splitting. The spin-splitting energies are equal to 1.4~5.3 and 4.5 meV . The samples also showed a persistent photoconductivity effect after illuminating by blue light-emitting diode.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0720106-002050 |
| Date | 20 July 2006 |
| Creators | Chang, Zhi-jie |
| Contributors | Ming-Kwei Lee, Ikai Lo, Jih-Chen Chiang |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0720106-002050 |
| Rights | unrestricted, Copyright information available at source archive |
Page generated in 0.0014 seconds