Approved for public release; distribution is unlimited / The effects of radiation in GaAs solar cells has been extensively researched and the results of numerous investigation have yielded a considerable amount of information about the degradation in irradiated solar cells. This thesis establishes a novel method in which to use Silvaco's physically-based device simulator, ATLAS, to model the effects of radiation on solar cell output characteristics. A virtual model representing a single junction GaAs solar cell was created in ATLAS. The effects of radiation were modeled using carrier trapping statements representing the defects associated with various fluence levels of 1 MeV electron radiation which were characterized with Deep Level Transient Spectroscopy techniques. The resulting output characteristics of the virtual solar cell, illuminated with a simulated AM0 spectrum, were compared to published experimental measurements for GaAs solar cells of the same dimensions. The virtual solar cell demonstrated a good correlation between the measured and virtual solar cell output characteristics and accurate representation of the spectral response. Complete ATLAS and MATLAB codes are included in appendices. / Major, United States Marine Corps
| Identifer | oai:union.ndltd.org:nps.edu/oai:calhoun.nps.edu:10945/1447 |
| Date | 09 1900 |
| Creators | Crespin, Aaron L. |
| Contributors | Michael, Sherif, Karunasiri, Gamani, Naval Postgraduate School, Electrical and Computer Engineering |
| Publisher | Monterey, California. Naval Postgraduate School |
| Source Sets | Naval Postgraduate School |
| Detected Language | English |
| Type | Thesis |
| Format | xvi, 67 p. : ill. (some col.) ;, application/pdf |
| Rights | This publication is a work of the U.S. Government as defined in Title 17, United States Code, Section 101. Copyright protection is not available for this work in the United States. |
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