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A Comprehensive Study of Safe-Operating-Area, Biasing Constraints, and Breakdown in Advanced SiGe HBTs

This thesis presents a comprehensive assessment of breakdown and operational voltage constraints in state-of-the-art silicon-germanium (SiGe)
heterojunction bipolar transistor (HBT) BiCMOS technology. Technology scaling of SiGe HBTs for high frequency performance
results on lower breakdown voltages, making operating voltage constraints an increasingly vital reliability consideration in SiGe HBTs from both a device and circuits perspective.

Identiferoai:union.ndltd.org:GATECH/oai:smartech.gatech.edu:1853/7124
Date19 May 2005
CreatorsGrens, Curtis M.
PublisherGeorgia Institute of Technology
Source SetsGeorgia Tech Electronic Thesis and Dissertation Archive
Languageen_US
Detected LanguageEnglish
TypeThesis
Format9886881 bytes, application/pdf

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