The temperature coefficient of frequency (TCF), electromechanical coupling coefficient (K2) and surface acoustic wave (SAW) velocity are the major factors when choosing the substrates for surface acoustic wave devices. There exist a wide range for the designer to controll the above factors.
This thesis adopted several methods to change the properties of SAW devices. First, the SAW velocity is increased using aluminum nitride (AlN) thin films deposited on z-cut LiNbO3 substrates. Besides, the ST-quartz is adopted as substrate for comparison to clarify the temperature characteristic of AlN itself. The well-known positive TCF material, silicon dioxide (SiO2), is also deposited on z-cut LiNbO3 substrates for the purpose of improving the TCF of SAW devices. Finally, the optimal piezoelectric bilayer structures will be conducted for the improvement of the properties of SAW devices on LiNbO3 substrate.
AlN and SiO2 thin films are selected to be deposited on z-cut LiNbO3 and ST-cut quartz substrates using the reactive RF magnetron sputtering. The characteristics of AlN thin films are evaluated using the analyses of XRD, SEM and AFM. The optimized growth parameters of highly c-axis oriented AlN films deposited on LiNbO3 substrate are sputtering pressure of 3.5 mTorr, nitrogen concentration (N2/N2+Ar) of 60%, RF power density of 8.1 W/cm2 and substrate temperature of 400¢J. On the other hand, the optimal parameters for highly c-axis oriented AlN films deposited on quartz substrate are sputtering pressure of 15 mTorr, nitrogen concentration of 30%, RF power density of 8.1 W/cm2 and substrate temperature of 400¢J.
In addition, the interdigital transducers (IDTs) are fabricated on LiNbO3, AlN/LiNbO3, SiO2/LiNbO3, quartz and AlN/quartz substrates, respectively. The characteristic parameters of SAW devices are measured by Hewlett-Packard (HP) 8720 network analyzer.
For SiO2/LiNbO3 SAW devices, the SiO2 thin films reveal the compensation of TCF, but the surface wave velocity remain almost unchanged. For AlN/quartz SAW devices, the positive temperature coefficient of AlN is clarfied by taking ST-quartz substrates as comparison. For AlN/LiNbO3 SAW devices, the characteristic improvements of frequency increase and TCF compensation of LiNbO3 SAW devices are achieved at the same time.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0709104-120458 |
| Date | 09 July 2004 |
| Creators | Kao, Kuo-Sheng |
| Contributors | Chen-Kuei Chung, Ying-Chung Chen, Tai-Kang Shing, Long Wu, Chien-Chuan Cheng, Nan-Chung Wu, Mau-Phon Houng |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0709104-120458 |
| Rights | unrestricted, Copyright information available at source archive |
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