We will discuss the growth and characterization of AlxGa1-xN/GaN on sapphire substrate by plasma-assisted molecular beam epitaxy. By performing the X-ray diffraction (XRD) of our sample, we could control the fraction of Aluminum in about 0%, 16%, and 31% with varying the equivalent pressure of Aluminum. Under the investigation of field emission scanning electron microscopy (FESEM) and reflection high energy electron diffraction (RHEED) pattern, we can determinate the samples are N-polarity. The photoluminescence (PL) spectra show the bowing coefficient of AlGaN is about 1.38 eV. Furthermore, The Hall mobility could be improved from 8.2 cm2/Vs to 453 cm2/Vs or 796 cm2/Vs at room temperature or liquid nitrogen temperature respectively, after changing the structure of AlxGa1-xN, such as fraction of Aluminum, the thickness of i-AlxGa1-xN and n-AlxGa1-xN, and cap layer.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0706104-140927 |
| Date | 06 July 2004 |
| Creators | Gau, Ming-Horng |
| Contributors | Ikai Lo, Yan-Ten Lu, Li-Wei Tu |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0706104-140927 |
| Rights | off_campus_withheld, Copyright information available at source archive |
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