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Determination of polarization charge density on interface of AlGaN/GaN heterostructure by electroreflectance

Electroreflectance spectra of AlGaN/GaN heteostructure were measured for various biased voltage (Vbias). There are Franz-Keldysh oscillations (FKOs) exhibiting above band gap of AlGaN, and strength of electric field of AlGaN (FAlGaN) can be evaluated from periods of the FKOs. A positive polarization charge

Identiferoai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0710106-205605
Date10 July 2006
CreatorsWu, Chia-Chun
ContributorsLi-Wei Tu, Dong-Po Wang, Yan-Ten Lu, Quark Chen, Min-Hsiung Tsai
PublisherNSYSU
Source SetsNSYSU Electronic Thesis and Dissertation Archive
LanguageCholon
Detected LanguageEnglish
Typetext
Formatapplication/pdf
Sourcehttp://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0710106-205605
Rightsunrestricted, Copyright information available at source archive

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